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PHP20N06T

N-channel TrenchMOS transistor

Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusingTrenchMOS?1technology. Features ■Verylowon-stateresistance ■Fastswitching. Applications ■Switchedmodepowersupplies ■DCtoDCconverters.

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

PHP20N06T

N-channel TrenchMOS standard level FET

1.1Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproductisdesignedandqualifiedforusein computing,communications,consumerandindustrialapplicationsonly. 1.2Featuresandbenefits L

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PHP20N06T

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=20A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=75mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

PHX20N06T

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=12.9A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=75mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

PHX20N06T

N-channelTrenchMOS??standardlevelFET

Description N-channelenhancementmodefield-effectpowertransistorinafullyisolatedplasticpackageusingTrenchMOS?technology. Features ■Standardlevelcompatible ■Isolatedpackage. Applications ■DCmotorcontrol ■Synchronousrectification ■DC-to-DCconverters ■Generalpur

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

PJD20N06A

60VN-ChannelEnhancementModeMOSFET

PANJITPan Jit International Inc.

強茂強茂股份有限公司

SK20N06A

N-ChannelEnhancementModeFieldEffectTransistor

SKTECHNOLGYSHIKE Electronics

時科廣東時科微實業(yè)有限公司

SSD20N06

N-ChEnhancementModePowerMOSFET

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

STD20N06

N-CHANNELENHANCEMENTMODE??LTRAHIGHDENSITY??POWERMOSTRANSISTOR

DESCRIPTION ThisseriesofPOWERMOSFETSrepresentsthelatestdevelopmentinlowvoltagetechnology.Theultrahighcelldensityprocess(UHD)producedwithfinegeometriesonadvancedequipmentgivesthedeviceextremelylowRDS(on)aswellasgoodswitchingperformanceandhighavalancheene

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STP20N06

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.06? ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE ■APPLICATIONORIENTEDCHARACTERIZATION APPLICAT

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

詳細參數(shù)

  • 型號:

    PHP20N06T

  • 功能描述:

    MOSFET RAIL MOSFET

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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更多PHP20N06T供應商 更新時間2025-6-16 9:50:00