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PHP18NQ11T

N-channelTrenchMOSstandardlevelFET

1.1Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproductisdesignedandqualifiedforusein computing,communications,consumerandindustrialapplicationsonly. 1.2Featuresandbenefits H

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PHP18NQ11T

iscN-ChannelMOSFETTransistor

·DESCRIPTION ·DrainCurrentID=18A@TC=25℃ ·DrainSourceVoltage- :VDSS=110V(Min) ·FastSwitchingSpeed ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ·APPLICATIONS ·Generalpurposepoweramplifier

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

PHP18NQ11T

TrenchMOSstandardlevelFET

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

PHX18NQ11

N-channelTrenchMOSstandardlevelFET

Description N-channelenhancementmodefield-effectpowertransistorinafullyisolatedplasticpackageusingTrenchMOS?technology. Features ■Lowon-stateresistance ■Fastswitching ■Isolatedmountingbase ■Lowthermalresistance Applications ■DC-to-DCconverters ■Switched-mode

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

PHX18NQ11T

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=12.5A@TC=25℃ ·DrainSourceVoltage-VDSS=110V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=90mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

PHX18NQ11T

N-channelTrenchMOSstandardlevelFET

Description N-channelenhancementmodefield-effectpowertransistorinafullyisolatedplasticpackageusingTrenchMOS?technology. Features ■Lowon-stateresistance ■Fastswitching ■Isolatedmountingbase ■Lowthermalresistance Applications ■DC-to-DCconverters ■Switched-mode

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

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