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首頁 >PHP110NQ08TIC>規(guī)格書列表

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PHB110NQ08LT

N-channelTrenchMOSlogiclevelFET

Description LogiclevelN-channelenhancementmodefield-effecttransistorinaplasticpackage usingTrenchMOS?technology. Features ■Logiclevelthreshold ■Verylowon-stateresistance. Applications ■Motors,lamps,solenoids ■Uninterruptiblepowersupplies ■DC

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

PHB110NQ08LT

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=75V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8.5mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

PHB110NQ08T

N-channelTrenchMOSstandardlevelFET

1.1Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproductisdesignedandqualifiedforusein computing,communications,consumerandindustrialapplicationsonly. 1.2Featuresandbenefits L

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PHB110NQ08T

N-channelTrenchMOSstandardlevelFET

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

PHP110NQ08LT

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=75V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8.5mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

PHP110NQ08LT

N-channelTrenchMOSlogiclevelFET

Description LogiclevelN-channelenhancementmodefield-effecttransistorinaplasticpackage usingTrenchMOS?technology. Features ■Logiclevelthreshold ■Verylowon-stateresistance. Applications ■Motors,lamps,solenoids ■Uninterruptiblepowersupplies ■DC

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

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