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PHK4NQ10T

N-channel TrenchMOS transistor

GENERALDESCRIPTION N-channelenhancementmodefield-effecttransistorinaplasticenvelopeusing’trench’technology. FEATURES ?Lowon-stateresistance ?Fastswitching ?Lowprofilesurfacemountpackage Applications:- ?Motorandrelaydrivers ?d.c.tod.c.converters

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

PHK4NQ10T

N-Channel 100 V (D-S) MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21 Definition ?ExtremelyLowQgdforSwitchingLosses ?100RgTested ?100AvalancheTested ?ComplianttoRoHSDirective2002/95/EC APPLICATIONS ?PrimarySideSwitch

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

PHT4NQ10LT

N-Channel100-V(D-S)MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?TrenchFET?PowerMOSFETs ?175°CMaximumJunctionTemperature ?ComplianttoRoHSDirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

PHT4NQ10LT

N-channelTrenchMOSlogiclevelFET

1.1Generaldescription LogiclevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproductisdesignedandqualifiedforusein computing,communications,consumerandindustrialapplications. 1.2Featuresandbenefits ?Lowcond

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PHT4NQ10LT

N-channelenhancementmodefield-effecttransistor

Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusingTrenchMOS?1technology. Productavailability: PHT4NQ10LTinSOT223. Features ■TrenchMOS?technology ■Fastswitching ■Lowon-stateresistance ■Surfacemountpackage ■Logiclevelcompatible.

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

PHT4NQ10T

TrenchMOS?standardlevelFET

1.Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusing TrenchMOS?technology. Productavailability: PHT4NQ10TinSOT223. 2.Features nTrenchMOS?technology nVeryfastswitching nSurfacemountpackage. 3.Applications nPrimarysideswitchinDCto

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PHT4NQ10T

N-Channel100-V(D-S)MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?TrenchFET?PowerMOSFETs ?175°CMaximumJunctionTemperature ?ComplianttoRoHSDirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

PHT4NQ10T

N-channelenhancementmodefield-effecttransistor

Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusingTrenchMOS?1technology. Features ■TrenchMOS?technology ■Veryfastswitching ■Surfacemountpackage. Applications ■PrimarysideswitchinDCtoDCconverters ■Highspeedlinedriver ■Fastgener

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

詳細(xì)參數(shù)

  • 型號(hào):

    PHK4NQ10T

  • 功能描述:

    MOSFET TAPE13 PWR-MOS

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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恩XP
25+
SOP-8
20300
NXP/恩智浦原裝特價(jià)PHK4NQ10T即刻詢(xún)購(gòu)立享優(yōu)惠#長(zhǎng)期有貨
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6200
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PH
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SOT96-1
21000
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NA
8800
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2960
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更多PHK4NQ10T供應(yīng)商 更新時(shí)間2025-7-11 10:12:00