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PHB63NQ03LT

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=69A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=13mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

PHB63NQ03LT

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=66A@TC=25℃ ·DrainSourceVoltage-VDSS=25V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=11mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

PHB63NQ03LT

TrenchMOSlogiclevelFET

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

PHD63NQ03LT

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=69A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=13mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

PHD63NQ03LT

TrenchMOSlogiclevelFET

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

PHP63NQ03LT

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=68.9A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=17.7mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

PHP63NQ03LT

TrenchMOSlogiclevelFET

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

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