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PHB108NQ03LT

TrenchMOS logic level FET

Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusingTrenchMOS?technology. Productavailability: PHP108NQ03LTinSOT78(TO-220AB) PHB108NQ03LTinSOT404(D2-PAK) PHD108NQ03LTinSOT428(D-PAK). Features ■Logiclevelcompatible ■

PHI

PHB108NQ03LT

N-channel TrenchMOS logic level FET

Generaldescription LogiclevelN-channelenhancementmodeField-EffectTransistor(FET)inaplasticpackageusingTrenchMOS?technology. Features ■Logiclevelthreshold ■Verylowon-stateresistance ■Lead-freeconstruction ■Lowgatecharge Applications ■DC-to-DCconve

恩XP

PHB108NQ03LT

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=25V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=6mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·Switch-modePowerSupplies ·PowerMotorControl

PHB108NQ03LT

N-channel TrenchMOS? logic level FET

General description\nLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS? technology.; ■Logic level threshold\n■Very low on-state resistance\n■Lead-free construction\n■Low gate chargeApplications\n■DC-to-DC converter\n■Switch-mode power supplies;

恩XP

PHB108NQ03LT

N-channel TrenchMOS logic level FET

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.\n;