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SFT2014

HighEnergyNPNTransistor

200AMP100–140VoltHighEnergyNPNTransistor Features: ?BVCBO=250VMIN ?600WattsPowerDissipation ?ExcellentSOACurve ?Es/bof800mJ ?Gainofover5at200A ?HighReliabilityConstruction ?PlanarChipConstructionwithLowLeakageandVeryFastSwitching ?TX,TXV,S-Leve

SSDI

Solid States Devices, Inc

SFT2014

200AMP100-140VOLTSNPNTRANSISTOR

200AMP100–140VOLTSNPNTRANSISTOR Features: ?BV(CBO)=250Voltsminimum ?600WPowerDissipation ?ExcellentSOACurve ?Es/bof800mJ ?Gainofover5at200A ?HighRelConstructionincludingGoldEutecticDieMounting,AluminumWiring ?PlanarChipConstructionwithLowLeakage

SSDI

Solid States Devices, Inc

SFT2014

HIGHENERCYNPNTRANSISTOR

[SSDI] 2N5094AND2N5096 HIGHVOLTAGEPNPTRANSISTOR450-500VOLTS SFT2010,SFT2012,SFT2014 200AMPHIGHENERGYNPNTRANSISTORVCEO100,120,140VOLTS

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SG2014

HIGHVOLTAGEMEDIUMCURRENTDRIVERARRAYS

DESCRIPTION TheSG2000seriesintegratessevenNPNDarlingtonpairswithinternalsuppressiondiodestodrivelamps,relays,andsolenoidsinmanymilitary,aerospace,andindustrialapplicationsthatrequiresevereenvironments.Allunitsfeatureopencollectoroutputswithgreaterthan50Vbrea

MicrosemiMicrosemi Corporation

美高森美美高森美公司

SG2014

HIGHVOLTAGEMEDIUMCURRENTDRIVERARRAYS

DESCRIPTION TheSG2000seriesintegratessevenNPNDarlingtonpairswithinternalsuppressiondiodestodrivelamps,relays,andsolenoidsinmanymilitary,aerospace,andindustrialapplicationsthatrequiresevereenvironments.Allunitsfeatureopencollectoroutputswithgreaterthan50Vbrea

MicrosemiMicrosemi Corporation

美高森美美高森美公司

SG2014

HIGHVOLTAGEMEDIUMCURRENTDRIVERARRAYS

Description Crossreferenceto5962-86058012A,5962-86058012,86058012 TheSG2800seriesintegrateseightNPNDarlingtonpairswithinternalsuppressiondiodestodrivelamps,relays,andsolenoidsinmanymilitary,aerospace,andindustrialapplicationsthatrequiresevereenvironments.A

MicrosemiMicrosemi Corporation

美高森美美高森美公司

SG2014

HIGHVOLTAGEMEDIUMCURRENTDRIVERARRAYS

DESCRIPTION TheSG2000seriesintegratessevenNPNDarlingtonpairswithinternalsuppressiondiodestodrivelamps,relays,andsolenoidsinmanymilitary,aerospace,andindustrialapplicationsthatrequiresevereenvironments.Allunitsfeatureopencollectoroutputswithgreaterthan50Vbrea

MicrosemiMicrosemi Corporation

美高森美美高森美公司

SGM2014

LowPower,LowDropout,250mA,RF-LinearRegulators

GENERALDESCRIPTION TheSGM2014serieslow-power,low-noise,low-dropout,CMOSlinearvoltageregulatorsoperatefroma2.5Vto5.5Vinputanddeliverupto250mA.Theyaretheperfectchoiceforlowvoltage,lowpowerapplications. FEATURES -LowOutputNoise:30μVRMSTYP(10Hzto100kHz) -Ul

SGMICROSG Micro Corp

圣邦股份圣邦微電子（北京）股份有限公司

SGM2014

GaAsN-channelDualGateMESFET?

Description TheSGM2014MisanN-channeldualgateGaAsMESFETforUHFbandlow-noiseamplification.ThisFETissuitableforawiderangeofapplicationsincludingTVtuners,cellularradios,andDBSIFamplifiers. Features ?Lowvoltageoperation ?Lownoise:NF=1.5dB(typ.)at900MHz ?

SonySony Semiconductor Solutions Group

索尼

SGM2014

GaAsN-channelDualGateMESFET

Description TheSGM2014ANisanN-channeldualgateGaAsMESFETforUHFbandlow-noiseamplification.ThisFETissuitableforawiderangeofapplicationsincludingTVtuners,cellularradios,andDBSIFamplifiers. Features ?Ultrasmallpackage ?Lowvoltageoperation ?Lownoise:NF=1.

SonySony Semiconductor Solutions Group

索尼

詳細(xì)參數(shù)

  • 型號：

    PG2014

  • 功能描述：

    2 AMP/NPN-PNP Pirgo silicon planar power transistors

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N/A
24+
10000
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WISE
23+
SOP-8
17483
一級代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、
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WISE
23+
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89630
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行業(yè)低價(jià),代理渠道
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2318+
DIP
4862
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PANJIT
20+
DO-15
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CJ/長電
24+
DO-15
50000
只做原裝，歡迎詢價(jià)，量大價(jià)優(yōu)
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JXND/嘉興南電
24+
DO-15
50000
全新原裝,一手貨源,全場熱賣!
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Panjit International Inc.
25+
DO-15
9350
獨(dú)立分銷商 公司只做原裝 誠心經(jīng)營 免費(fèi)試樣正品保證
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SUNMATE(森美特)
2019+ROHS
DO-15
66688
森美特高品質(zhì)產(chǎn)品原裝正品免費(fèi)送樣
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更多PG2014供應(yīng)商 更新時(shí)間2025-7-22 15:30:00

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