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RBV5010

SILICONBRIDGERECTIFIERS

EIC

EIC discrete Semiconductors

RBV5010

SILICONBRIDGERECTIFIERS

SILICONBRIDGERECTIFIERS PRV:50-1000VoltsIo:50Amperes FEATURES: *Highcurrentcapability *Highsurgecurrentcapability *Highreliability *Lowreversecurrent *Lowforwardvoltagedrop *Highcasedielectricstrengthof2000VDC *Idealforprintedcirc

SYNSEMI

SynSemi，Inc.

RBV5010

SILICONBRIDGERECTIFIERS

EIC

EIC discrete Semiconductors

RBV5010

SILICONBRIDGERECTIFIERS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

RBV5010

SILICONBRIDGERECTIFIERS

EIC

EIC discrete Semiconductors

RBV5010

ASEMIBridgeRectifier

FEATURES: Highcurrentcapability Highsurgecurrentcapability Highreliability Lowreversecurrent Lowforwardvoltagedrop Highcasedielectricstrengthof2000VDC Idealforprintedcircuitboard Verygoodheatdissipation ComponentIndex,filenumberSZXEC1902259902 ThisseriesisS

ASEMIASEMI TECHNOLOGY., LTD

強元芯電子強元芯電子（廣東）有限公司

RBV5010R

SILICONBRIDGERECTIFIERS

EIC

EIC discrete Semiconductors

REF5010

Low-Noise,VeryLowDrift,PrecisionVOLTAGEREFERENCE

TITexas Instruments

德州儀器美國德州儀器公司

REF5010

Low-Noise,VeryLowDrift,PrecisionVoltageReference

TI1Texas Instruments

德州儀器美國德州儀器公司

REF5010

Low-Noise,VeryLowDriftPrecision

TITexas Instruments

德州儀器美國德州儀器公司

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更多PEWAD5010供應(yīng)商 更新時間2025-7-25 10:03:00

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