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PESD3V3S2UAT-Q

Marking：7A；Package：SOT23；Double ESD protection diode in SOT23 package

1.Generaldescription UnidirectionaldoubleESDprotectiondiodeincommoncathodeconfigurationinasmallSOT23 Surface-MountedDevice(SMD)plasticpackage,designedtoprotectuptotwodatalinesagainst damagefromElectroStaticDischarge(ESD)andothertransients. 2.Featuresandbene

PESD3V3S2UQ

DoubleESDprotectiondiodesinSOT663package

1.1Generaldescription UnidirectionaldoubleElectroStaticDischarge(ESD)protectiondiodesinaSOT663ultra smallandflatleadSurface-MountedDevice(SMD)plasticpackagedesignedtoprotect uptotwosignallinesfromthedamagecausedbyESDandothertransients. 1.2Features 1.3Appl

PESD3V3S2UQ

DoubleESDprotectiondiodesinSOT663package

PESD3V3S2UT

350Wpeakpulsepower(tp=8/20μs)

Features 350Wpeakpulsepower(tp=8/20μs) Bidirectionalandunidirectionalconfigurations Solid-statesilicon-avalanchetechnology Lowclampingvoltage Lowleakagecurrent IEC61000-4-2±30kVcontact±30kVair IEC61000-4-4(EFT)40A(5/50ns) IEC61000-4-5(Lightning)20A(8/20μs） Applic

PESD3V3S2UT

DoubleESDprotectiondiodesinSOT23package

DESCRIPTION Uni-directionaldoubleESDprotectiondiodesinaSOT23plasticpackage.DesignedtoprotectuptotwotransmissionordatalinesfromElectroStaticDischarge(ESD)damage. FEATURES ?Uni-directionalESDprotectionofuptotwolines ?Max.peakpulsepower:Ppp=330Wattp=8/2

PESD3V3S2UT

DoubleESDprotectiondiodesinSOT23package

FEATURES ?Uni-directionalESDprotectionofuptotwolines ?Max.peakpulsepower:Ppp=330Wattp=8/20μs ?Lowclampingvoltage:V(CL)R=20VatIpp=18A ?Ultra-lowreverseleakagecurrent:IRM23kV ?IEC61000-4-2;level4(ESD) ?IEC61000-4-5(su

PESD3V3S2UT

DoubleESDprotectiondiodesinSOT23package

PESD3V3S2UT-Q

DoubleESDprotectiondiode

1.Generaldescription Uni-directionaldoubleESDprotectiondiodeinaSOT23plasticpackage.Designedtoprotectupto twotransmissionordatalinesfromElectroStaticDischarge(ESD)damage. 2.Featuresandbenefits ?Uni-directionalESDprotectionofuptotwolines ?Max.peakpulsep