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QBH-2001

RFAMPLIFIERMODEL

APITECH

API Technologies Corp

R2001

20.0AMPSILICONRECTIFIERS

DGNJDZNanjing International Group Co

南晶電子東莞市南晶電子有限公司

RBU2001M

SINGLE-PHASEGLASSPASSIVATEDSILICONBRIDGERECTIFIERVOLTAGERANGE50to1000VoltsCURRENT20Amperes

FEATURES *Lowleakage *Lowforwardvoltage *Surgeoverloadrating:300amperespeak *Mountingposition:Any *Idealforprintedcircuitboards *Highforwardsurgecurrentcapability

RECTRON

Rectron Semiconductor

RC2001-L

OUTLINEDIMENISON&BLOCKDIAGRAM

OKAYAOKAYA ELECTRIC INDUSTRIES CO., LTD.

岡谷電機(jī)工業(yè)株式會(huì)社

RF2001

SAWFilter

REYCONNSREYCONNS CHINA LIMITED

來(lái)億中國(guó)來(lái)億中國(guó)有限公司

RF2001

FastrecoveryDiodes(SiliconEpitaxialPlanar)

Features 1)UltralowVFveryfastrecovery 2)Fastrecovery 3)Lowswitchingloss 4)StandardpackageTO-220FN,CPD Applications Highfrequencyrectification

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

RN2001

Switching,InverterCircuit,InterfaceCircuitAndDriverCircuitApplications

Switching,InverterCircuit,InterfaceCircuit AndDriverCircuitApplications ●Withbuilt-inbiasresistors ●Simplifycircuitdesign ●Reduceaquantityofpartsandmanufacturingprocess ●ComplementarytoRN1001~RN1006

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

RQG2001URAQF

NPNSiliconGermaniumTransistorHighFrequencyMediumPowerAmplifier

Features ?Idealfor2GHzBandapplications.e.g2.4GHzWLAN,Digitalcordlessphone. ?LowDistortionandExcellentLinearity IP3atoutput=+30dBmtyp.,P1dBatoutput=+19dBmtyp.,f=1.8GHz ?HighTransitionFrequency fT=20GHztyp. ?HighCollectortoEmitterVoltage

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

RQG2001UR-TL-E

NPNSiliconGermaniumTransistorHighFrequencyMediumPowerAmplifier

Features ?Idealfor2GHzBandapplications.e.g2.4GHzWLAN,Digitalcordlessphone. ?LowDistortionandExcellentLinearity IP3atoutput=+30dBmtyp.,P1dBatoutput=+19dBmtyp.,f=1.8GHz ?HighTransitionFrequency fT=20GHztyp. ?HighCollectortoEmitterVoltage

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

RQK2001HQDQA

SiliconNChannelMOSFETPowerSwitching

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

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