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PDTD113Z

50 V, 500 mA NPN resistor-equipped transistors

PDTD113ZQA

絲?。?a target="_blank" title="Marking" href="/011111/marking.html">011111；Package：DFN1010D-3；50 V, 500 mA NPN resistor-equipped transistors

Featuresandbenefits ?500mAoutputcurrentcapability ?Built-inbiasresistors ??10resistorratiotolerance ?Simplifiescircuitdesign ?Reducescomponentcount ?Reducedpickandplacecosts ?Lowpackageheightof0.37mm ?SuitableforAutomaticOptical Inspection(AOI)ofsold

PDTD113ZQA

50 V, 500 mA PNP resistor-equipped transistors

Featuresandbenefits ?500mAoutputcurrentcapability ?Built-inbiasresistors ??10resistorratiotolerance ?Simplifiescircuitdesign ?Reducescomponentcount ?Reducedpickandplacecosts ?Lowpackageheightof0.37mm ?SuitableforAutomaticOptical Inspection(AOI)ofsold

PDTD113ZQA_SER

50 V, 500 mA NPN resistor-equipped transistors

Featuresandbenefits ?500mAoutputcurrentcapability ?Built-inbiasresistors ??10resistorratiotolerance ?Simplifiescircuitdesign ?Reducescomponentcount ?Reducedpickandplacecosts ?Lowpackageheightof0.37mm ?SuitableforAutomaticOptical Inspection(AOI)ofsold

PDTD113ZT

絲?。?a target="_blank" title="Marking" href="/7v/marking.html">7V；Package：SOT23；50 V, 500 mA NPN resistor-equipped transistor; R1 = 1 kΩ, R2 = 10 kΩ

1.Generaldescription NPN500mAResistor-EquippedTransistor(RET)inasmallSOT23Surface-MountedDevice (SMD)plasticpackage. PNPcomplement:PDTB113ZT 2.Featuresandbenefits ?Built-inbiasresistors ?Reducescomponentcount ?Simplifiescircuitdesign ?Reducespickandplace

PDTD113ZT

NPN 500 mA, 50 V resistor-equipped transistor; R1 = 1 kOhm, R2 = 10 kOhm

NPN 500 mA Resistor-Equipped Transistor (RET) in a small Surface-Mounted Device (SMD) plastic package.\n PNP complement: PDTB113ZT.\n; ? Built-in bias resistors\n? Reduces component count\n? Simplifies circuit design\n? Reduces pick and place costs\n? 500 mA output current capability\n? +-10 pct resistor ratio tolerance\n? AEC-Q101 qualified\n;

PDTD113ZT-Q

絲印：7V；Package：SOT23；NPN 500 mA, 50 V resistor-equipped transistor; R1 = 1 kΩ, R2 = 10 kΩ

1.Generaldescription NPN500mAResistor-EquippedTransistor(RET)inasmallSOT23Surface-MountedDevice (SMD)plasticpackage. PNPcomplement:PDTB113ZT 2.Featuresandbenefits ?Built-inbiasresistors ?Reducescomponentcount ?Simplifiescircuitdesign ?Reducespickandplace

PDTD113ZT-Q

NPN 500 mA, 50 V resistor-equipped transistor; R1 = 1 kΩ, R2 = 10 kΩ

NPN 500 mA Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package.\n PNP complement: PDTB113ZT\n; ? Built-in bias resistors\n? Reduces component count\n? Simplifies circuit design\n? Reduces pick and place costs\n? 500 mA output current capability\n? ± 10 % resistor ratio tolerance\n? Qualified according to AEC-Q101 and recommended for use in automotive applications\n;

PDTD113ZU

500 mA, 50 V NPN resistor-equipped transistors

NPN Resistor-Equipped Transistor (RET) family in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package.\n; ? 500 mA output current capability\n? Built-in bias resistors\n? Simplifies circuit design\n? Reduces component count\n? ±10 % resistor ratio tolerance\n? AEC-Q101 qualified\n? High temperature applications up to 175 °C\n;

PDTD113ZU

絲印：ZQ；Package：SC-70；500 mA, 50 V NPN resistor-equipped transistors

Generaldescription NPNResistor-EquippedTransistor(RET)familyinaverysmallSOT323(SC-70)Surface-MountedDevice(SMD)plasticpackage. Features ■500mAoutputcurrentcapability ■±10resistorratiotolerance ■Built-inbiasresistors ■AEC-Q101qualified ■Simplifiescircuitd