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PDTC124XM

NPN resistor-equipped transistors; R1 = 22 k廓, R2 = 47 k廓

Generaldescription NPNResistor-EquippedTransistors(RET)family. Features ■Built-inbiasresistors ■Reducescomponentcount ■Simplifiescircuitdesign ■Reducespickandplacecosts Applications ■General-purposeswitchingandamplification ■Circuitdrivers ■Inverterandinterfac

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PDTC124XM

絲?。?a target="_blank" title="Marking" href="/dz/marking.html">DZ；Package：SC-101；NPN resistor-equipped transistors; R1 = 22 kΩ, R2 = 47 kΩ

Features *Built-inbiasresistors *Simplifiescircuitdesign *Reducescomponentcount *Reducespickandplacecosts

PDTC124XM

PNP resistor-equipped transistors; R1 = 22 kW, R2 = 47 kW

Features *Built-inbiasresistors *Simplifiescircuitdesign *100mAoutputcurrentcapability *Reducescomponentcount *Reducespickandplacecosts

PDTC124XM

絲?。?a target="_blank" title="Marking" href="/dz/marking.html">DZ；Package：DFN1006-3；50 V, 100 mA NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = 47 kΩ

1.Generaldescription NPNResistor-EquippedTransistor(RET)inanleadlessultrasmallSOT883(SC-101)Surface- MountedDevice(SMD)plasticpackage. PNPcomplement:PDTA124XM 2.Featuresandbenefits ?Built-inbiasresistors ?Simplifiescircuitdesign ?Reducescomponentcount ?Red

PDTC124XM

NPN resistor-equipped transistors; R1 = 22 kOhm, R2 = 47 kOhm; ? Built-in bias resistors\n? Reduces component count\n? Simplifies circuit design\n? Reduces pick and place costs\n? AEC-Q101 qualified\n;

NPN Resistor-Equipped Transistors (RET) family.\n

PDTC124XMB

NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = 47 kΩ; ? 100 mA output current capability\n? Reduces component count\n? Built-in bias resistors\n? Reduces pick and place costs\n? Simplifies circuit design\n? AEC-Q101 qualified\n? Leadless ultra small SMD plastic package\n? Low package height of 0.37 mm\n;

NPN Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA124XMB.\n

PDTC124XMB

絲?。?a target="_blank" title="Marking" href="/00111001/marking.html">00111001；Package：DFN1006B-3；NPN resistor-equipped transistor; R1 = 22 k廓, R2 = 47 k廓

Generaldescription NPNResistor-EquippedTransistor(RET)inaleadlessultrasmallDFN1006B-3(SOT883B)Surface-MountedDevice(SMD)plasticpackage. PNPcomplement:PDTA124XMB. Featuresandbenefits ■100mAoutputcurrentcapability ■Reducescomponentcount ■Built-inbiasresistors ■

PDTC124XQB

絲?。?a target="_blank" title="Marking" href="/e5/marking.html">E5；Package：SOT8015；50 V, 100 mA NPN resistor-equipped transistors

Featuresandbenefits ?100mAoutputcurrentcapability ?Built-inresistors ?Simplifiescircuitdesign ?Reducescomponentcount ?Reducespickandplacecosts ?Lowpackageheightof0.5mm ?SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint

PDTC124XQB

50 V, 100 mA PNP resistor-equipped transistors

Featuresandbenefits ?100mAoutputcurrentcapability ?Built-inresistors ?Simplifiescircuitdesign ?Reducescomponentcount ?Reducespickandplacecosts ?Lowpackageheightof0.5mm ?SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint

PDTC124XQB-Q

絲?。?a target="_blank" title="Marking" href="/e5/marking.html">E5；Package：SOT8015；50 V, 100 mA NPN resistor-equipped transistors

Featuresandbenefits ?100mAoutputcurrentcapability ?Built-inresistors ?Simplifiescircuitdesign ?Reducescomponentcount ?Reducespickandplacecosts ?Lowpackageheightof0.5mm ?SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint ?QualifiedaccordingtoAEC-Q