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PDTC124EQC-Q

50 V, 100 mA NPN resistor-equipped transistors; ? 100 mA output current capability\n? Built-in resistors\n? Simplifies circuit design\n? Reduces component count\n? Reduces pick and place costs\n? Low package height of 0.5 mm\n? Suitable for Automatic Optical Inspection (AOI) of solder joint\n? Qualified according to AEC-Q101 and recommended for use in automotive applications\n;

100 mA NPN Resistor-Equipped Transistor (RET) family in an ultra small DFN1412D-3 (SOT8009) leadless Surface-Mounted Device (SMD) plastic package with side-wettable flanks.\nTable 1. Product overview Type number\n R1\n R2\n Package\n PNP complement:\n k?\n k?\n Nexperia\n JEDEC\n PDTC143EQC-Q\n 4.7\n 4.7\n SOT8009\n MO-340CA\n PDTA143EQC-Q\n PDTC114EQC-Q\n 10\n 10\n PDTA114EQC-Q\n PDTC124EQC-Q\n 22\n 22\n PDTA124EQC-Q\n PDTC144EQC-Q\n 47\n 47\n PDTA144EQC-Q\n

PDTC124EQC-Q

絲?。?a target="_blank" title="Marking" href="/8m/marking.html">8M；Package：DFN1412D-3；50 V, 100 mA NPN resistor-equipped transistors

Featuresandbenefits ?100mAoutputcurrentcapability ?Built-inresistors ?Simplifiescircuitdesign ?Reducescomponentcount ?Reducespickandplacecosts ?Lowpackageheightof0.5mm ?SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint ?QualifiedaccordingtoAEC-Q

PDTC124EQC-QZ

Package：3-XDFN 裸露焊盤；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極（BJT）- 單，預(yù)偏置 描述：PDTC124EQC-Q/SOT8009/DFN1412D-

Nexperia USA Inc.

PDTC124ES

NPNresistor-equippedtransistors;R1=22k-ohm,R2=22k-ohm

DESCRIPTION NPNresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplif

PDTC124ES

NPNresistor-equippedtransistor

DESCRIPTION NPNresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplif

PDTC124ET

NPNresistor-equippedtransistors;R1=22k-ohm,R2=22k-ohm

DESCRIPTION NPNresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplif

PDTC124ET

NPNresistor-equippedtransistor

DESCRIPTION NPNresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplif

PDTC124ET

LowVCEsat(BISS)transistors

PDTC124ET

50V,100mANPNresistor-equippedtransistor;R1=22kΩ,R2=22kΩ

1.Generaldescription NPNResistor-EquippedTransistor(RET)inasmallSOT23(TO-236AB)Surface-MountedDevice (SMD)plasticpackage. PNPcomplement:PDTA124ET 2.Featuresandbenefits ?100mAoutputcurrentcapability ?Built-inbiasresistors ?Simplifiescircuitdesign ?Reducesco

PDTC124ET

PNPresistor-equippedtransistors;R1=22k?,R2=22k?

Featuresandbenefits *100mAoutputcurrentcapability *Built-inbiasresistors *Simplifiescircuitdesign *Reducescomponentcount *Reducespickandplacecosts *AEC-Q101qualified