最新无码a∨在线观看,一本av高清一区二区三区,亚洲熟妇色l20p,宅男噜噜69av,中出あ人妻熟女中文字幕

PDTC123EM

NPN resistor-equipped transistors; R1 = 2.2 k廓, R2 = 2.2 k廓

DESCRIPTION NPNresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplif

ETC

PDTC123EM

絲?。?a target="_blank" title="Marking" href="/g1/marking.html">G1；Package：SOT883；NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ

FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplification ?Inverterandinterfacecircuits ?Circuitdriver.

PDTC123EM

PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ

FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplification ?Inverterandinterfacecircuits ?Circuitdriver.

PDTC123EM

絲?。?a target="_blank" title="Marking" href="/g1/marking.html">G1；Package：DFN1006-3；50 V, 100 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ

1.Generaldescription NPNResistor-EquippedTransistor(RET)inanleadlessultrasmallSOT883(SC-101)Surface- MountedDevice(SMD)plasticpackage. PNPcomplement:PDTA123EM 2.Featuresandbenefits ?Built-inbiasresistors ?Simplifiescircuitdesign ?Reducescomponentcount ?Red

PDTC123EM

NPN resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 2.2 kOhm; ? Built-in bias resistors\n? Simplified circuit design\n? Reduction of component count\n? Reduced pick and place costs.\n? AEC-Q101 qualified\n;

NPN resistor-equipped transistor (see ?Simplified outline, symbol and pinning? for package details).\n

PDTC123EM

NPN resistor-equipped transistors; R1 = 2.2 k-ohm, R2 = 2.2 k-ohm

PHI

PDTC123EMB

NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ; ? 100 mA output current capability\n? Reduces component count\n? Built-in bias resistors\n? Reduces pick and place costs\n? Simplifies circuit design\n? AEC-Q101 qualified\n? Leadless ultra small SMD plastic package\n? Low package height of 0.37 mm\n;

NPN Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.\n PNP complement: PDTA123EMB.\n

PDTC123EMB

絲?。?a target="_blank" title="Marking" href="/00110011/marking.html">00110011；Package：DFN1006B-3；NPN resistor-equipped transistor; R1 = 2.2 k廓, R2 = 2.2 k廓

Generaldescription NPNResistor-EquippedTransistor(RET)inaleadlessultrasmallDFN1006B-3(SOT883B)Surface-MountedDevice(SMD)plasticpackage. PNPcomplement:PDTA123EMB. Featuresandbenefits ■100mAoutputcurrentcapability ■Reducescomponentcount ■Built-inbiasresistors ■

PDTC123EM,315

Package：SC-101，SOT-883；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極（BJT）- 單，預(yù)偏置 描述：TRANS PREBIAS NPN 50V DFN1006-3

ETC

PDTC123EMB,315

Package：3-XFDFN；包裝：卷帶（TR） 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極（BJT）- 單，預(yù)偏置 描述：TRANS PREBIAS NPN 50V DFN1006B-3

ETC