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PDTC114ET

NPNresistor-equippedtransistor;R1=10k廓,R2=10k廓

DESCRIPTION NPNResistor-EquippedTransistor(RET)familyinsmallSurface-MountedDevice(SMD)plasticpackages. FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandampli

ETC

ETC

PDTC114ET

NPNresistor-equippedtransistors;R1=10k??R2=10k?

ETC

ETC

PDTC114ET

NPNresistor-equippedtransistors

PHIPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

PHI

PDTC114ET

50V,100mANPNresistor-equippedtransistor;R1=10kΩ,R2=10kΩ

1.Generaldescription NPNResistor-EquippedTransistor(RET)inasmallSOT23Surface-MountedDevice(SMD)plastic package. PNPcomplement:PDTA114ET 2.Featuresandbenefits ?100mAoutputcurrentcapability ?Built-inbiasresistors ?Simplifiescircuitdesign ?Reducescomponentcou

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PDTC114ET

NPNresistor-equippedtransistors;R1=10k?,R2=10k?

Featuresandbenefits ?100mAoutputcurrentcapability ?Built-inbiasresistors ?Simplifiescircuitdesign ?Reducescomponentcount ?Reducespickandplacecosts ?AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PDTC114ET-Q

50V,100mANPNresistor-equippedtransistor;R1=10kΩ,R2=10kΩ

1.Generaldescription NPNResistor-EquippedTransistor(RET)inasmallSOT23Surface-MountedDevice(SMD)plastic package. PNPcomplement:PDTA114ET-Q 2.Featuresandbenefits ?100mAoutputcurrentcapability ?Built-inbiasresistors ?Simplifiescircuitdesign ?Reducescomponentc

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PDTC114EU

NPNresistor-equippedtransistor

DESCRIPTION NPNresistor-equippedtransistor FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplification ?Inverterandinterfacecircuits ?Circuitdriver.

PHIPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

PHI

PDTC114EU

NPNresistor-equippedtransistor;R1=10kohm,R2=10kohm

DESCRIPTION NPNresistor-equippedtransistor FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplification ?Inverterandinterfacecircuits ?Circuitdriver.

PHIPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

PHI

PDTC114EU

LowVCEsat(BISS)transistors

PHIPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

PHI

PDTC114EU

NPNresistor-equippedtransistor;R1=10k廓,R2=10k廓

DESCRIPTION NPNResistor-EquippedTransistor(RET)familyinsmallSurface-MountedDevice(SMD)plasticpackages. FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandampli

ETC

ETC

技術(shù)參數(shù)

  • Package name：

    DFN1006B-3

  • Size (mm)：

    1 x 0.6 x 0.37

  • Channel type：

    NPN

  • Ptot (mW)：

    250

  • R2 (typ) (kΩ)：

    10

  • IC [max] (mA)：

    100

  • R1 (typ) (kΩ)：

    10

  • VCEO (V)：

    50

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更多PDTC114EMB供應(yīng)商 更新時(shí)間2025-7-29 16:35:00

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