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PDTB123YQA

50 V, 500 mA PNP resistor-equipped transistors; ? 500 mA output current capability\n? Built-in bias resistors\n? ± 10% resistor ratio tolerance\n? Simplifies circuit design\n? Reduces component count\n? Reduced pick and place cost\n? Low package height of 0.37 mm\n? Suitable for Automatic Optical Inspection (AOI) of solder joint\n? AEC-Q101 qualified\n;

PNP Resistor-Equipped Transistor (RET) family in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.\n

PDTB123YQA

絲?。?a target="_blank" title="Marking" href="/100001/marking.html">100001；Package：SOT1215；50 V, 500 mA PNP resistor-equipped transistors

1.1Generaldescription PNPResistor-EquippedTransistor(RET)familyinaleadlessultrasmallDFN1010D-3 (SOT1215)Surface-MountedDevice(SMD)plasticpackagewithvisibleandsolderable sidepads. 1.2Featuresandbenefits 1.3Applications Table1.Productoverview TypenumberR1R2Pac

PDTB123YQA

50 V, 500 mA NPN resistor-equipped transistors

Featuresandbenefits ?500mAoutputcurrentcapability ?Built-inbiasresistors ??10resistorratiotolerance ?Simplifiescircuitdesign ?Reducescomponentcount ?Reducedpickandplacecosts ?Lowpackageheightof0.37mm ?SuitableforAutomaticOptical Inspection(AOI)ofsold

PDTB123YQA

絲印：100001；Package：DFN1010D-3；50 V, 500 mA PNP resistor-equipped transistors

Featuresandbenefits ?500mAoutputcurrentcapability ?Built-inbiasresistors ??10resistorratiotolerance ?Simplifiescircuitdesign ?Reducescomponentcount ?Reducedpickandplacecosts ?Lowpackageheightof0.37mm ?SuitableforAutomaticOptical Inspection(AOI)ofsold

PDTB123YQAZ

Package：3-XDFN 裸露焊盤；包裝：卷帶（TR） 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極（BJT）- 單，預(yù)偏置 描述：TRANS PREBIAS PNP 3DFN

ETC

PDTB123YS

PNP500mA,50Vresistor-equippedtransistors

Generaldescription 500mAPNPResistor-EquippedTransistors(RET)family. Features ■Built-inbiasresistors ■Reducescomponentcount ■Simplifiescircuitdesign ■Reducespickandplacecosts ■500mAoutputcurrentcapability ■±10resistorratiotolerance Applications ■Digital

PHI

PDTB123YS

PNP500mA,50Vresistor-equippedtransistors;R1=2.2k廓,R2=10k廓

Generaldescription 500mAPNPResistor-EquippedTransistors(RET)family. Features ■Built-inbiasresistors ■Reducescomponentcount ■Simplifiescircuitdesign ■Reducespickandplacecosts ■500mAoutputcurrentcapability ■±10resistorratiotolerance Applications ■Digitalapp

ETC

PDTB123YS

NPN500mA,50Vresistor-equippedtransistors;R1=2.2kΩ,R2=10kΩ

Features *Built-inbiasresistors *Simplifiescircuitdesign *500mAoutputcurrentcapability *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

PDTB123YT

PNP500mA,50Vresistor-equippedtransistors

Generaldescription 500mAPNPResistor-EquippedTransistors(RET)family. Features ■Built-inbiasresistors ■Reducescomponentcount ■Simplifiescircuitdesign ■Reducespickandplacecosts ■500mAoutputcurrentcapability ■±10resistorratiotolerance Applications ■Digital

PHI

PDTB123YT

LowVCEsat(BISS)transistors

PHI