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UN2215

SiliconNPNepitaxialplanartransistor

SiliconNPNepitaxialplanartransistor Fordigitalcircuits ■Features ?Costscanbereducedthroughdownsizingoftheequipmentand reductionofthenumberofparts. ?Minitypepackageallowingeasyautomaticinsertionthroughtape packingandmagazinepacking

PanasonicPanasonic Semiconductor

松下松下電器

UNR2215

SiliconNPNepitaxialplanartransistor

SiliconNPNepitaxialplanartransistor Fordigitalcircuits ■Features ?Costscanbereducedthroughdownsizingoftheequipmentand reductionofthenumberofparts. ?Minitypepackageallowingeasyautomaticinsertionthroughtape packingandmagazinepacking

PanasonicPanasonic Semiconductor

松下松下電器

WL2215-L

WidebandLNA

RFHIC

rfhic

WL2215-L

WidebandLNA

Descriptions RFHIC’sLOWNoiseAmplifierseriesareallhybridLNAtypeproductswhichincludesallmatchingfortheconvenienceofcustomers.WLseriesareawidebandLNAusedforupto50~2200MHz.ThestructureofthedeviceisbuiltwithGaAsp-HEMTdieattachedonaceramicthickfilmsubstra

RFHIC

rfhic

XP2215

SiliconNPNepitaxialplanertransistor

SiliconNPNepitaxialplanertransistor Forswitching/digitalcircuits ■Features ●Twoelementsincorporatedintoonepackage.(Base-coupledtransistorswithbuilt-inresistor) ●Reductionofthemountingareaandassemblycostbyonehalf.

PanasonicPanasonic Semiconductor

松下松下電器

技術(shù)參數(shù)

  • 組態(tài):

    Dual?

  • MOS類型:

    P+P

  • VDS(V):

    -20

  • VGS(V):

    ±10

  • Vth(V):

    0.3/0.6/1

  • 4.5V:

    70/85

  • 2.5V:

    95/120

  • 1.8V:

    130/170

  • Ciss(pF):

    350

  • Coss(pF):

    65

  • Crss(pF):

    50

  • Qg(nC)_4.5V:

    4.8

  • Qgs(nC):

    0.5

  • Qgd(nC):

    1.9

  • ID(A)_TA=25℃:

    3

  • ID(A)_TA=70℃:

    2.4

  • PD(W)_TA=25℃:

    1.25

  • ESD Diode:

    X

  • Schokkty Diode:

    X

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POTENS/博盛
2511
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360000
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98000
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20+
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55
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萊爾德
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CUI
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50
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更多PDQ2215供應(yīng)商 更新時(shí)間2025-7-27 15:17:00