描述 Description

Archived content is no longer updated and is made available for historical reference only.
The PCF8594C-2 is a floating gate Electrically Erasable Programmable Read Only Memory (EEPROM) with 4 kbits (512 x 8-bit) non-volatile storage. By using an internal redundant storage code, it is fault tolerant to single bit errors. This feature dramatically increases the reliability compared to conventional EEPROMs. Power consumption is low due to the full CMOS technology used. The programming voltage is generated on-chip, using a voltage multiplier.
Data bytes are received and transmitted via the serial I2C-bus. Up to four PCF8594C-2 devices may be connected to the I2C-bus. Chip select is accomplished by two address inputs (A1 and A2).
Timing of the E/W cycle is carried out internally, thus no external components are required. Programming Time Control (PTC), Pin 7, must be connected to either VDD or left open-circuit. There is an option of using an external clock for timing the length of an E/W cycle.

特性 Features

Low power CMOS: 2.0 mA maximum operating current
maximum standby current 10 uA (at 6.0 V), typical 4 uA
Non-volatile storage of 4 kbits organized as 512 x 8-bit
Single supply with full operation down to 2.5 V
On-chip voltage multiplier
Serial input/output I2C-bus
Write operations: byte write mode
8-byte page write mode (minimizes total write time per byte)
Read operations: sequential read
random read
Internal timer for writing (no external components)
Internal power-on reset
0 kHz to 100 kHz clock frequency
High reliability by using a redundant storage code
Endurance: 1,000,000 Erase/Write (E/W) cycles at Tamb =22Cel
10 years non-volatile data retention time
ESD protection exceeds 2000 V HBM per JESD22-A114, 150 V MM per JESD22-A115, and 1000 V CDM per JESD22-C101
Latch-up testing is done to JEDEC Standard JESD78 which exceeds 100 mA
Offered in DIP8 and SO8 packages.