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PBSS9410PA

100 V, 2.7 A PNP low VCEsat (BISS) transistor; ? Low collector-emitter saturation voltage VCEsat\n? High collector current capability IC and ICM\n? Smaller required Printed-Circuit Board (PCB) area than for conventional transistors\n? Exposed heat sink for excellent thermal and electrical conductivity\n? Leadless small SMD plastic package with medium power capability\n;

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability.\n NPN complement: PBSS8510PA.\n

PBSS9410PA

絲?。?a target="_blank" title="Marking" href="/ag/marking.html">AG；Package：HUSON3；100 V, 2.7 A PNP low VCEsat (BISS) transistor

Generaldescription PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistor,encapsulatedinanultrathinSOT1061leadlesssmallSurface-MountedDevice(SMD)plasticpackagewithmediumpowercapability. NPNcomplement:PBSS8510PA. Featuresandbenefits ■Lowcollector-emittersaturatio

PBSS9410PA_15

100 V, 2.7 A PNP low VCEsat (BISS) transistor

PBSS9410PA,115

Package：3-PowerUDFN；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管（BJT）- 單個 描述：TRANS PNP 100V 2.7A 3HUSON

Nexperia USA Inc.

PCA-9410

PulsedVoltageSource

PCA-9410

PulsedVoltageSource

PCA-9410

PulsedPrecisionCurrentSource

PE9410

7/16DINMaleto7/16DINFemaleRightAngleAdapter

PJL9410

30VN-ChannelEnhancementModeMOSFET

Features ?RDS(ON),VGS@10V,ID@10A

PL9410

SMTPOWERINDUCTORS