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PBSS9110Z

絲?。?a target="_blank" title="Marking" href="/pb9110/marking.html">PB9110；Package：SC-73；100 V, 1 A PNP low VCEsat (BISS) transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

PBSS9110Z

100 V, 1 A PNP low VCEsat (BISS) transistor; ? Low collector-emitter saturation voltage VCEsat\n? High collector current capability IC and ICM\n? High collector current gain (hFE) at high IC\n? High efficiency due to less heat generation\n? Smaller required Printed-Circuit Board (PCB) area than for conventional transistors\n? AEC-Q101 qualified\n;

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.\n NPN complement: PBSS8110Z.\n

PBSS9110Z

Low VCEsat (BISS) transistors

PBSS9110Z-135

100 V, 1 A PNP low VCEsat (BISS) transistor; ■ Low collector-emitter saturation voltage VCEsat\n■ High collector current capability IC and ICM\n■ High collector current gain (hFE) at high IC\n■ High efficiency due to less heat generation\n■ Smaller required Printed-Circuit Board (PCB) area than for conventional transistorsApplications\n■ High-voltage DC-to-DC conversion\n■ High-voltage MOSFET gate driving\n■ High-voltage motor control\n■ High-voltage power switches (e.g. motors, fans)\n■ Automotive applications;

General description\nPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.\nNPN complement: PBSS8110Z.

PBSS9110Z_15

100 V, 1 A PNP low VCEsat (BISS) transistor

PBSS9110Z,135

Package：TO-261-4，TO-261AA；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管（BJT）- 單個(gè) 描述：TRANS PNP 100V 1A SOT223

Nexperia USA Inc.