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PBSS4630PA

30 V, 6 A NPN low V_CEsat (BISS) transistor; ? Low collector-emitter saturation voltage VCEsat\n? High collector current capability IC and ICM\n? Smaller required Printed-Circuit Board (PCB) area than for conventional transistors\n? Exposed heat sink for excellent thermal and electrical conductivity\n? Leadless small SMD plastic package with medium power capability\n;

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability.\n PNP complement: PBSS5630PA.\n

PBSS4630PA

30 V, 6 A NPN low VCEsat (BISS) transistor

Generaldescription NPNlowVCEsatBreakthroughInSmallSignal(BISS)transistor,encapsulatedinanultrathinSOT1061leadlesssmallSurface-MountedDevice(SMD)plasticpackagewithmediumpowercapability. PNPcomplement:PBSS5630PA. Featuresandbenefits ■Lowcollector-emittersaturatio

ETC

PBSS4630PA

絲?。?a target="_blank" title="Marking" href="/a7/marking.html">A7；Package：HUSON3；30 V, 6 A NPN low VCEsat (BISS) transistor

Featuresandbenefits *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors *Exposedheatsinkforexcellentthermalandelectricalconductivity *LeadlesssmallS

PBSS4630PA_15

30 V, 6 A NPN low VCEsat (BISS) transistor

PHI

PBSS4630PA,115

Package：3-PowerUDFN；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管（BJT）- 單個 描述：TRANS NPN 30V 6A 3HUSON

ETC

PE4630

75OhmBNCFemaleConnectorSolderAttachment4HoleFlangeSolderCupTerminal,.500inchHoleSpacing

S-4630A

64-bitTHERMALHEADDRIVER

SI4630DY

N-Channel25-V(D-S)MOSFET

SI4630DY

N-Channel25-V(D-S)MOSFET

SI4630DY

N-Channel25-V(D-S)MOSFET