最新无码a∨在线观看,一本av高清一区二区三区,亚洲熟妇色l20p,宅男噜噜69av,中出あ人妻熟女中文字幕

PBSS4330PA

絲?。?a target="_blank" title="Marking" href="/ah/marking.html">AH；Package：DFN2020-3；30 V, 3 A NPN low VCEsat (BISS) transistor

1.Generaldescription NPNlowVCEsatBreakthroughInSmallSignal(BISS)transistor,encapsulatedinan ultrathinSOT1061leadlesssmallSurface-MountedDevice(SMD)plasticpackagewith mediumpowercapability. PNPcomplement:PBSS5330PA. 2.Featuresandbenefits ?Lowcollector-emitter

PBSS4330PA

30 V, 3 A NPN low VCEsat (BISS) transistor; ? Low collector-emitter saturation voltage VCEsat\n? High collector current capability IC and ICM\n? Smaller required Printed-Circuit Board (PCB) area than for conventional transistors\n? Exposed heat sink for excellent thermal and electrical conductivity\n? Leadless small SMD plastic package with medium power capability\n;

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability.\n PNP complement: PBSS5330PA.\n

PBSS4330PA

30 V, 3 A NPN low VCEsat (BISS) transistor

PHI

PBSS4330PAS

絲印：E1；Package：DFN2020D-3；30 V, 3 A NPN low VCEsat (BISS) transistor

Generaldescription NPNlowVCEsatBreakthroughInSmallSignal(BISS)transistor,encapsulatedinanultrathinDFN2020D-3(SOT1061D)leadlesssmallSurface-MountedDevice(SMD)plasticpackagewithmediumpowercapabilityandvisibleandsoldarablesidepads. PNPcomplement:PBSS5330PAS Featu

PBSS4330PAS

30 V, 3 A NPN low VCEsat (BISS) transistor; ? Low collector-emitter saturation voltage VCEsat\n? High collector current capability IC and ICM\n? High collector current gain (hFE) at high IC\n? High efficiency due to less heat generation\n? High temperature applications up to 175 °C\n? Reduced Printed-Circuit Board (PCB) area requirements\n? Leadless small SMD plastic package with soldarable side pads\n? Exposed heat sink for excellent thermal and electrical conductivity\n? Suitable for Automatic Optical Inspection (AOI) of solder joint\n? AEC-Q101 qualified\n;

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and soldarable side pads.\n PNP complement: PBSS5330PAS\n

PBSS4330PAS-Q

30 V, 3 A NPN low VCEsat transistor; ? Low collector-emitter saturation voltage VCEsat\n? High collector current capability IC and ICM\n? High collector current gain (hFE) at high IC\n? High efficiency due to less heat generation\n? High temperature applications up to 175 °C\n? Reduced Printed-Circuit Board (PCB) area requirements\n? Leadless small SMD plastic package with soldarable side pads\n? Exposed heat sink for excellent thermal and electrical conductivity\n? Suitable for Automatic Optical Inspection (AOI) of solder joint\n? Qualified according to AEC-Q101 and recommended for use in automotive applications\n;

NPN low VCEsat transistor encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and soldarable side pads.\n PNP complement: PBSS5330PAS\n

PBSS4330PAS-Q

絲?。?a target="_blank" title="Marking" href="/e1/marking.html">E1；Package：DFN2020D-3；30 V, 3 A NPN low VCEsat transistor

1.Generaldescription NPNlowVCEsattransistorencapsulatedinanultrathinDFN2020D-3(SOT1061D)leadlesssmall Surface-MountedDevice(SMD)plasticpackagewithmediumpowercapabilityandvisibleand soldarablesidepads. PNPcomplement:PBSS5330PAS 2.Featuresandbenefits ?Lowcol

PBSS4330PA_15

30 V, 3 A NPN low VCEsat (BISS) transistor

PHI

PBSS4330PAS_15

30 V, 3 A NPN low VCEsat (BISS) transistor

PHI

PBSS4330PA,115

Package：3-PowerUDFN；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：分立半導體產(chǎn)品 晶體管 - 雙極性晶體管（BJT）- 單個 描述：TRANS NPN 30V 3A 3HUSON

ETC