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PBSS4021NT

絲?。?a target="_blank" title="Marking" href="/bh/marking.html">BH；Package：SOT23；20 V, 4.3 A NPN low VCEsat (BISS) transistor

Features *Verylowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highenergyefficiencyduetolessheatgeneration *AEC-Q101qualified *SmallerrequiredPrinted-CircuitBoard(PCB)areathanfor

PBSS4021NT

20 V, 4.3 A NPN low VCEsat (BISS) transistor; ? Very low collector-emitter saturation voltage VCEsat\n? High collector current capability IC and ICM\n? High collector current gain (hFE) at high IC\n? High energy efficiency due to less heat generation\n? AEC-Q101 qualified\n? Smaller required Printed-Circuit Board (PCB) area than for conventional transistors\n;

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.\n PNP complement: PBSS4021PT.\n

PBSS4021NT

20 V, 4.3 A NPN low VCEsat (BISS) transistor;

PBSS4021NT-Q

20 V, 4.3 A NPN low VCEsat transistor;

NPN low VCEsat transistor in a SOT23 small Surface-Mounted Device (SMD) plastic package.\n PNP complement: PBSS4021PT-Q\n

PBSS4021NT-Q

絲?。?a target="_blank" title="Marking" href="/bh/marking.html">BH；Package：SOT23；20 V, 4.3 A NPN low VCEsat transistor

1.Generaldescription NPNlowVCEsattransistorinaSOT23smallSurface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBSS4021PT-Q 2.Featuresandbenefits ?Verylowcollector-emittersaturationvoltageVCEsat ?HighcollectorcurrentcapabilityICandICM ?Highcollectorcurre

PBSS4021NT,215

Package：TO-236-3，SC-59，SOT-23-3；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管（BJT）- 單個(gè) 描述：TRANS NPN 20V 4.3A TO236AB

Nexperia USA Inc.