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PBSS304ND

80 V, 3 A NPN low VCEsat (BISS) transistor; ? Low collector-emitter saturation voltage VCEsat\n? High collector current capability IC and ICM\n? High collector current gain (hFE) at high IC\n? High efficiency due to less heat generation\n? Smaller required Printed-Circuit Board (PCB) area than for conventional transistors\n? AEC-Q101 qualified\n;

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package.\n PNP complement: PBSS304PD.\n

NexperiaNexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBSS304ND

Marking:AF;Package:SC-74;80 V, 3 A NPN low VCEsat (BISS) transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBSS304ND

Low VCEsat (BISS) transistors

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

PBSS304ND,115

Package:SC-74,SOT-457;包裝:卷帶(TR) 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管(BJT)- 單個 描述:TRANS NPN 80V 1A 6TSOP

Nexperia USA Inc.

Nexperia USA Inc.

Nexperia USA Inc.

PBSS304NX

60V,4.7ANPNlowVCEsat(BISS)transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBSS304NZ

60V,5.2ANPNlowVCEsat(BISS)transistor

Generaldescription NPNlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaSOT223(SC-73)smallSurface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBSS304PZ. Features ■Lowcollector-emittersaturationvoltageVCEsat ■HighcollectorcurrentcapabilityICandICM ■Hig

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

PBSS304NZ

60V,5.2ANPNlowVCEsat(BISS)transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBSS304NZ-Q

60V,5.2ANPNlowVCEsattransistor

1.Generaldescription NPNlowVCEsattransistorinaSOT223(SC-73)smallSurface-MountedDevice(SMD)plastic package. PNPcomplement:PBSS304PZ-Q 2.Featuresandbenefits ?Lowcollector-emittersaturationvoltageVCEsat ?HighcollectorcurrentcapabilityICandICM ?Highcollectorc

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBSS304PD

LowVCEsat(BISS)transistors

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

PBSS304PD

80V,3APNPlowVCEsat(BISS)transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

技術(shù)參數(shù)

  • Package version:

    SOT457

  • Package name:

    TSOP6

  • Size (mm):

    2.9 x 1.5 x 1

  • transistor polarity:

    NPN

  • P_tot [max] (mW):

    360

  • V_CEO [max] (V):

    80

  • I_C [max] (A):

    1

  • I_CM [max] (A):

    6

  • h_FE [min]:

    240

  • h_FE [typ]:

    360

  • f_T [typ] (MHz):

    140

  • R_CEsat [typ] (mΩ):

    68

  • V_CEsat [max] (mV):

    505

供應(yīng)商型號品牌批號封裝庫存備注價格
恩XP
16+
TSOP6
3000
進口原裝現(xiàn)貨/價格優(yōu)勢!
詢價
NEXPERIA/安世
2019+
SOT457
78550
原廠渠道 可含稅出貨
詢價
恩XP
2011+PB
TSOP6
3000
原裝正品 可含稅交易
詢價
NEXPERIA/安世
25+
TSOP6
42025
NEXPERIA/安世全新特價PBSS304ND即刻詢購立享優(yōu)惠#長期有貨
詢價
恩XP
24+
6-TSOP
115
詢價
恩XP
24+
TSOP6
5000
全現(xiàn)原裝公司現(xiàn)貨
詢價
恩XP
24+
SMD
3000
NXP一級代理商原裝進口現(xiàn)貨,假一賠十
詢價
恩XP
25+23+
SOT457
25083
絕對原裝正品全新進口深圳現(xiàn)貨
詢價
NEXPERIA/安世
2447
SOT457
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
詢價
恩XP
23+
TSOP6
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價
更多PBSS304ND供應(yīng)商 更新時間2025-7-28 8:31:00