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PBSS302NZ

20 V, 5.8 A NPN low VCEsat (BISS) transistor

Generaldescription NPNlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaSOT223(SC-73)smallSurface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBSS302PZ. Features ■Lowcollector-emittersaturationvoltageVCEsat ■HighcollectorcurrentcapabilityICandICM ■Hig

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PBSS302NZ

絲印：S302NZ；Package：SC-73；20 V, 5.8 A NPN low VCEsat transistor

1.Generaldescription NPNlowVCEsattransistorinaSOT223(SC-73)smallSurface-MountedDevice(SMD)plastic package. PNPcomplement:PBSS302PZ 2.Featuresandbenefits ?Lowcollector-emittersaturationvoltageVCEsat ?HighcollectorcurrentcapabilityICandICM ?Highcollectorcur

PBSS302NZ

20 V, 5.8 A NPN low VCEsat (BISS) transistor; ? Low collector-emitter saturation voltage VCEsat\n? High collector current capability IC and ICM\n? High collector current gain (hFE) at high IC\n? High efficiency due to less heat generation\n? Smaller required Printed-Circuit Board (PCB) area than for conventional transistors\n? AEC-Q101 qualified\n;

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.\n PNP complement: PBSS302PZ.\n

PBSS302NZ-Q

20 V, 5.8 A NPN low VCEsat transistor; ? Low collector-emitter saturation voltage VCEsat\n? High collector current capability IC and ICM\n? High collector current gain (hFE) at high IC\n? High efficiency due to less heat generation\n? Smaller required Printed-Circuit Board (PCB) area than for conventional transistors\n? Qualified according to AEC-Q101 and recommended for use in automotive applications\n;

NPN low VCEsat transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.\n

PBSS302NZ-Q

絲?。?a target="_blank" title="Marking" href="/s302nz/marking.html">S302NZ；Package：SC-73；20 V, 5.8 A NPN low VCEsat transistor

1.Generaldescription NPNlowVCEsattransistorinaSOT223(SC-73)smallSurface-MountedDevice(SMD)plastic package. 2.Featuresandbenefits ?Lowcollector-emittersaturationvoltageVCEsat ?HighcollectorcurrentcapabilityICandICM ?Highcollectorcurrentgain(hFE)athighIC

PBSS302NZ,135

Package：TO-261-4，TO-261AA；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：分立半導體產(chǎn)品 晶體管 - 雙極性晶體管（BJT）- 單個 描述：TRANS NPN 20V 5.8A SOT223

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PBSS302NZ-QF

包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：分立半導體產(chǎn)品 晶體管 - 雙極性晶體管（BJT）- 單個 描述：PBSS302NZ-Q/SOT223/SC-73

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