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PBRN123E

NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kW, R2 = 2.2 kW

Features *800mAoutputcurrentcapability *HighcurrentgainhFE *Built-inbiasresistors *Simplifiescircuitdesign *Lowcollector-emittersaturationvoltage VCEsat *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

PBRN123E

NPN 800 mA, 40 V BISS RETs; R1 = 2.2 k?, R2 = 2.2 k?;

PBRN123E_SER

NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kW, R2 = 2.2 kW

Features *800mAoutputcurrentcapability *HighcurrentgainhFE *Built-inbiasresistors *Simplifiescircuitdesign *Lowcollector-emittersaturationvoltage VCEsat *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

PBRN123EK

Marking：G3；Package：SC-59A；NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kW, R2 = 2.2 kW

Features *800mAoutputcurrentcapability *HighcurrentgainhFE *Built-inbiasresistors *Simplifiescircuitdesign *Lowcollector-emittersaturationvoltage VCEsat *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

PBRN123ES

Marking：N123ES；Package：SC-43A；NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kW, R2 = 2.2 kW

Features *800mAoutputcurrentcapability *HighcurrentgainhFE *Built-inbiasresistors *Simplifiescircuitdesign *Lowcollector-emittersaturationvoltage VCEsat *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

PBRN123ET

Marking：7J；Package：SOT23；NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kW, R2 = 2.2 kW

Features *800mAoutputcurrentcapability *HighcurrentgainhFE *Built-inbiasresistors *Simplifiescircuitdesign *Lowcollector-emittersaturationvoltage VCEsat *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

PBRN123ET

Marking：7J；Package：SOT23；40 V, 600 mA NPN PB RET; R1 = 2.2 kΩ, R2 = 2.2 kΩ

1.Generaldescription NPNlowVCEsatPerformance-Based(PB)Resistor-EquippedTransistor(RET)inasmallSOT23 (TO-236AB)Surface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBRP123ET 2.Featuresandbenefits ?600mAoutputcurrentcapability ?Lowcollector-emittersaturation

PBRN123ET

NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kOhm, R2 = 2.2 kOhm; ? 800 mA output current capability\n? Low collector-emitter saturation voltage VCEsat\n? High current gain hFE\n? Reduces component count\n? Built-in bias resistors\n? Reduces pick and place costs\n? Simplifies circuit design\n? +-10 pct resistor ratio tolerance\n? AEC-Q101 qualified\n;

800 mA NPN low VCEsat Breakthrough In Small Signal (BISS) Resistor-Equipped Transistors (RET) family in small plastic packages.\n

PBRN123ET-Q

40 V, 600 mA NPN PB RET; R1 = 2.2 kΩ, R2 = 2.2 kΩ; ? 600 mA output current capability\n? Low collector-emitter saturation voltage VCEsat\n? High current gain hFE\n? Reduces component count\n? Built-in bias resistors\n? Reduces pick and place costs\n? Simplifies circuit design\n? ± 10 % resistor ratio tolerance\n? Qualified according to AEC-Q101 and recommended for use in automotive applications\n;

NPN low VCEsat Performance-Based (PB) Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.\n PNP complement: PBRP123ET-Q\n

PBRN123ET-Q

Marking：7J；Package：SOT23；40 V, 600 mA NPN PB RET; R1 = 2.2 kΩ, R2 = 2.2 kΩ

1.Generaldescription NPNlowVCEsatPerformance-Based(PB)Resistor-EquippedTransistor(RET)inasmallSOT23 (TO-236AB)Surface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBRP123ET-Q 2.Featuresandbenefits ?600mAoutputcurrentcapability ?Lowcollector-emittersaturati