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PBRN123E

NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kW, R2 = 2.2 kW

Features *800mAoutputcurrentcapability *HighcurrentgainhFE *Built-inbiasresistors *Simplifiescircuitdesign *Lowcollector-emittersaturationvoltage VCEsat *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBRN123E

NPN 800 mA, 40 V BISS RETs; R1 = 2.2 k?, R2 = 2.2 k?;

NXPNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PBRN123E_SER

NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kW, R2 = 2.2 kW

Features *800mAoutputcurrentcapability *HighcurrentgainhFE *Built-inbiasresistors *Simplifiescircuitdesign *Lowcollector-emittersaturationvoltage VCEsat *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBRN123EK

Marking:G3;Package:SC-59A;NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kW, R2 = 2.2 kW

Features *800mAoutputcurrentcapability *HighcurrentgainhFE *Built-inbiasresistors *Simplifiescircuitdesign *Lowcollector-emittersaturationvoltage VCEsat *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBRN123ES

Marking:N123ES;Package:SC-43A;NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kW, R2 = 2.2 kW

Features *800mAoutputcurrentcapability *HighcurrentgainhFE *Built-inbiasresistors *Simplifiescircuitdesign *Lowcollector-emittersaturationvoltage VCEsat *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBRN123ET

Marking:7J;Package:SOT23;NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kW, R2 = 2.2 kW

Features *800mAoutputcurrentcapability *HighcurrentgainhFE *Built-inbiasresistors *Simplifiescircuitdesign *Lowcollector-emittersaturationvoltage VCEsat *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBRN123ET

Marking:7J;Package:SOT23;40 V, 600 mA NPN PB RET; R1 = 2.2 kΩ, R2 = 2.2 kΩ

1.Generaldescription NPNlowVCEsatPerformance-Based(PB)Resistor-EquippedTransistor(RET)inasmallSOT23 (TO-236AB)Surface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBRP123ET 2.Featuresandbenefits ?600mAoutputcurrentcapability ?Lowcollector-emittersaturation

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBRN123ET

NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kOhm, R2 = 2.2 kOhm; ? 800 mA output current capability\n? Low collector-emitter saturation voltage VCEsat\n? High current gain hFE\n? Reduces component count\n? Built-in bias resistors\n? Reduces pick and place costs\n? Simplifies circuit design\n? +-10 pct resistor ratio tolerance\n? AEC-Q101 qualified\n;

800 mA NPN low VCEsat Breakthrough In Small Signal (BISS) Resistor-Equipped Transistors (RET) family in small plastic packages.\n

NexperiaNexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBRN123ET-Q

40 V, 600 mA NPN PB RET; R1 = 2.2 kΩ, R2 = 2.2 kΩ; ? 600 mA output current capability\n? Low collector-emitter saturation voltage VCEsat\n? High current gain hFE\n? Reduces component count\n? Built-in bias resistors\n? Reduces pick and place costs\n? Simplifies circuit design\n? ± 10 % resistor ratio tolerance\n? Qualified according to AEC-Q101 and recommended for use in automotive applications\n;

NPN low VCEsat Performance-Based (PB) Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.\n PNP complement: PBRP123ET-Q\n

NexperiaNexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBRN123ET-Q

Marking:7J;Package:SOT23;40 V, 600 mA NPN PB RET; R1 = 2.2 kΩ, R2 = 2.2 kΩ

1.Generaldescription NPNlowVCEsatPerformance-Based(PB)Resistor-EquippedTransistor(RET)inasmallSOT23 (TO-236AB)Surface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBRP123ET-Q 2.Featuresandbenefits ?600mAoutputcurrentcapability ?Lowcollector-emittersaturati

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

技術(shù)參數(shù)

  • Package name:

    SOT23

  • Size (mm):

    2.9 x 1.3 x 1

  • IO [max] (mA):

    600

  • R1 (typ) (kΩ):

    2.2

  • R2 (typ) (kΩ):

    2.2

  • Channel type:

    NPN

  • Ptot (mW):

    250

  • VCEO (V):

    40

  • Tj [max] (°C):

    150

  • Automotive qualified:

    N

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
恩XP
24+
6000
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Nexperia
24+
NA
3000
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Nexperia/安世
22+
SOT23
210000
原廠原裝正品現(xiàn)貨
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TI/德州儀器
23+
SOT-223
69820
終端可以免費(fèi)供樣,支持BOM配單!
詢價(jià)
Nexperia(安世)
2447
SOT-23
115000
3000個(gè)/圓盤一級(jí)代理專營品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,
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NEXPERIA
1809+
SOT23-3
6675
就找我吧!--邀您體驗(yàn)愉快問購元件!
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NEXPERIA/安世
23+
SOT23
6000
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PHI
23+
SOT23
50000
全新原裝正品現(xiàn)貨,支持訂貨
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恩XP
22+
NA
45000
加我QQ或微信咨詢更多詳細(xì)信息,
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恩XP
2021+
SOT-89
7600
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更多PBRN123E供應(yīng)商 更新時(shí)間2025-7-27 15:30:00