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P50N03LTG

N-Channel 30 V (D-S) MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

P50N03LTG(EOL)

MOSFETs;

UnikcWuxi U-NIKC Semiconductor CO.,LTD

旭康微無錫旭康微電子有限公司

PHB50N03

TrenchMOStransistorStandardlevelFET

GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemountingusing’trench’technology.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.Itisintended

PHIPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

PHI

PHB50N03

N-channelTrenchMOStransistorLogiclevelFET

GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology. FEATURES ?’Trench’technology ?Verylowon-stateresistance ?Fastswitching ?Highthermalcyclingperformance ?Lowthermalresistance ?Logiclevel

PHIPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

PHI

PHB50N03LT

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=48A@TC=25℃ ·DrainSourceVoltage-VDSS=25V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=16mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

PHB50N03LT

N-channelTrenchMOStransistorLogiclevelFET

GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology. FEATURES ?’Trench’technology ?Verylowon-stateresistance ?Fastswitching ?Highthermalcyclingperformance ?Lowthermalresistance ?Logiclevel

PHIPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

PHI

PHB50N03T

TrenchMOStransistorStandardlevelFET

GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemountingusing’trench’technology.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.Itisintended

PHIPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

PHI

PHB50N03T

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=50A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=21mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

PHD50N03LT

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=48A@TC=25℃ ·DrainSourceVoltage-VDSS=25V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=18mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

PHD50N03LT

N-channelTrenchMOStransistorLogiclevelFET

GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology. FEATURES ?’Trench’technology ?Verylowon-stateresistance ?Fastswitching ?Highthermalcyclingperformance ?Lowthermalresistance ?Logiclevel

PHIPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

PHI

技術(shù)參數(shù)

  • Configuration：

    Single

  • Type：

    N

  • Vds(±V)：

    25

  • Vgs(±V)：

    20

  • RDS(on)(mΩmax)at VGS=10V：

    10

  • VGS(th)(max V)：

    3

  • Ciss(pF)：

    960

  • Crss(pF)：

    250

  • Qg(nC)：

    22.3

  • Qgd(nC)：

    5

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NIKOS
23+
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8650
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NIKOS
23+
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50000
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NIKOS
2022+
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2000
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23+
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63820
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N
23+
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6000
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NIKO-SEM/尼克森
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更多P50N03LTG供應(yīng)商 更新時(shí)間2025-7-29 15:51:00

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