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P25Q40L

UltraLowPower,4M/2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet

2Description The P25Q40L/20L/10L/05LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthe

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉股份普冉半導(dǎo)體(上海)股份有限公司

P25Q40LA-NXH-IR

UltraLowPower,4M/2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet

2Description The P25Q40L/20L/10L/05LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthe

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉股份普冉半導(dǎo)體(上海)股份有限公司

P25Q40LA-NXH-IT

UltraLowPower,4M/2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet

2Description The P25Q40L/20L/10L/05LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthe

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉股份普冉半導(dǎo)體(上海)股份有限公司

P25Q40LA-NXH-IW

UltraLowPower,4M/2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet

2Description The P25Q40L/20L/10L/05LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthe

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉股份普冉半導(dǎo)體(上海)股份有限公司

P25Q40LA-NXH-KR

UltraLowPower,4M/2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet

2Description The P25Q40L/20L/10L/05LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthe

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉股份普冉半導(dǎo)體(上海)股份有限公司

P25Q40LA-NXH-KT

UltraLowPower,4M/2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet

2Description The P25Q40L/20L/10L/05LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthe

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉股份普冉半導(dǎo)體(上海)股份有限公司

P25Q40LA-NXH-KW

UltraLowPower,4M/2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet

2Description The P25Q40L/20L/10L/05LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthe

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉股份普冉半導(dǎo)體(上海)股份有限公司

P25Q40LA-SSH-IR

UltraLowPower,4M/2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet

2Description The P25Q40L/20L/10L/05LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthe

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉股份普冉半導(dǎo)體(上海)股份有限公司

P25Q40LA-SSH-IT

UltraLowPower,4M/2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet

2Description The P25Q40L/20L/10L/05LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthe

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉股份普冉半導(dǎo)體(上海)股份有限公司

P25Q40LA-SSH-IW

UltraLowPower,4M/2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet

2Description The P25Q40L/20L/10L/05LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthe

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉股份普冉半導(dǎo)體(上海)股份有限公司

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