絲印 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
P10 | 型號(hào):DDTA143FE-7-F;Package:SOT523;PNP PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features - Epitaxial Planar Die Construction - Complementary NPN Types Available (DDTC) - Built-In Biasing Resistors, R1?R2 - Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) - Halogen and Antimony Free Green Device (Note 3) - Qualified to AEC-Q101 Standards for High Reliability 文件:349.06 Kbytes 頁數(shù):6 Pages | 美臺(tái)半導(dǎo)體 | ETC | |
型號(hào):DMP1012USS-13;Package:SO-8;12V P-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits ? Low On-Resistance ? Low Input Capacitance ? Fast Switching Speed ? Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) ? Halogen and Antimony Free. “Green” Device (Note 3) Description and Applications This MOSFET is designed to minimize the on-state resistance 文件:375.4 Kbytes 頁數(shù):7 Pages | 美臺(tái)半導(dǎo)體 | ETC | ||
型號(hào):PJP100P03_T0_00001;Package:TO-220AB;30V P-Channel Enhancement Mode MOSFET Features ? RDS(ON), VGS@-10V,ID@-20A 文件:364.36 Kbytes 頁數(shù):8 Pages | 強(qiáng)茂 | ETC | ||
型號(hào):STP10NK80Z;Package:TO-220;N-CHANNEL 800V - 0.78ohm - 9A TO-220/TO-220FP/TO-247 Zener-Protected SuperMESH??ower MOSFET Description The SuperMESH? series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH? layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. 文件:458.81 Kbytes 頁數(shù):11 Pages | 意法半導(dǎo)體 | ETC | ||
型號(hào):STP10NK80Z;Package:TO-220;N-channel 800 V, 0.78 Ω, 9 A Zener-protected SuperMESH? Power MOSFETs in TO-220, TO-220FP and TO-247 packages Description These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH? technology, achieved through optimization of ST's well established strip-based PowerMESH? layout. In addition to a significant reduction in onresistance, this device is design 文件:444.1 Kbytes 頁數(shù):17 Pages | 意法半導(dǎo)體 | ETC | ||
型號(hào):STP10NK80ZFP;Package:TO-220FP;N-CHANNEL 800V - 0.78ohm - 9A TO-220/TO-220FP/TO-247 Zener-Protected SuperMESH??ower MOSFET Description The SuperMESH? series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH? layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. 文件:458.81 Kbytes 頁數(shù):11 Pages | 意法半導(dǎo)體 | ETC | ||
型號(hào):STP10NK80ZFP;Package:TO-220FP;N-channel 800 V, 0.78 Ω, 9 A Zener-protected SuperMESH? Power MOSFETs in TO-220, TO-220FP and TO-247 packages Description These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH? technology, achieved through optimization of ST's well established strip-based PowerMESH? layout. In addition to a significant reduction in onresistance, this device is design 文件:444.1 Kbytes 頁數(shù):17 Pages | 意法半導(dǎo)體 | ETC | ||
型號(hào):SVFP10N60CAFJ;Package:TO-220FJ-3L;10A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVFP10N60CAFJ/FJH is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistan 文件:291.74 Kbytes 頁數(shù):8 Pages | 士蘭微 | ETC | ||
型號(hào):SVFP10N60CAFJ;Package:TO-220FJ-3L;10A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVFP10N60CAFJ/FJH is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistan 文件:291.75 Kbytes 頁數(shù):8 Pages | 士蘭微 | ETC | ||
型號(hào):SVFP10N60CAFJ;Package:TO-220FJ-3L;10A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVFP10N60CAFJ/FJH is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistan 文件:291.72 Kbytes 頁數(shù):8 Pages | 士蘭微 | ETC |
詳細(xì)參數(shù)
- 型號(hào):
P10
- 功能描述:
開關(guān)晶體管 - 偏壓電阻器 150MW 4.7K 22K
- RoHS:
否
- 制造商:
ON Semiconductor
- 晶體管極性:
NPN/PNP
- 安裝風(fēng)格:
SMD/SMT
- 封裝/箱體:
直流集電極/Base Gain hfe
- Min:
200 mA
- 最大工作頻率:
集電極—發(fā)射極最大電壓
- VCEO:
50 V
- 集電極連續(xù)電流:
150 mA
- 功率耗散:
200 mW
- 封裝:
Reel
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
Diodes |
24+ |
SOT-523 |
7500 |
詢價(jià) | |||
DIODESINC |
23+ |
NA |
14486 |
專做原裝正品,假一罰百! |
詢價(jià) | ||
DIODES |
1809+ |
SOT-523 |
6675 |
就找我吧!--邀您體驗(yàn)愉快問購元件! |
詢價(jià) | ||
DIODES/美臺(tái) |
23+ |
SOT-523 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
DIODES |
22+ |
NA |
12080 |
加我QQ或微信咨詢更多詳細(xì)信息, |
詢價(jià) | ||
Diodes Inc |
2022+ |
原廠原包裝 |
8600 |
全新原裝 支持表配單 中國(guó)著名電子元器件獨(dú)立分銷 |
詢價(jià) | ||
DIODES/美臺(tái) |
24+ |
NA/ |
36000 |
優(yōu)勢(shì)代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價(jià) | ||
DIODES |
23+ |
SOT-523 |
7300 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
DIODES INC. |
2023+ |
SMD |
12000 |
安羅世紀(jì)電子只做原裝正品貨 |
詢價(jià) | ||
DIODES |
23+ |
SOT-523 |
7300 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) |
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