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P10

型號(hào):DDTA143FE-7-F;Package:SOT523;PNP PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features - Epitaxial Planar Die Construction - Complementary NPN Types Available (DDTC) - Built-In Biasing Resistors, R1?R2 - Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) - Halogen and Antimony Free Green Device (Note 3) - Qualified to AEC-Q101 Standards for High Reliability

文件:349.06 Kbytes 頁數(shù):6 Pages

美臺(tái)半導(dǎo)體

P1012US

型號(hào):DMP1012USS-13;Package:SO-8;12V P-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits ? Low On-Resistance ? Low Input Capacitance ? Fast Switching Speed ? Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) ? Halogen and Antimony Free. “Green” Device (Note 3) Description and Applications This MOSFET is designed to minimize the on-state resistance

文件:375.4 Kbytes 頁數(shù):7 Pages

美臺(tái)半導(dǎo)體

P100P03

型號(hào):PJP100P03_T0_00001;Package:TO-220AB;30V P-Channel Enhancement Mode MOSFET

Features ? RDS(ON), VGS@-10V,ID@-20A

文件:364.36 Kbytes 頁數(shù):8 Pages

強(qiáng)茂

P10NK80Z

型號(hào):STP10NK80Z;Package:TO-220;N-CHANNEL 800V - 0.78ohm - 9A TO-220/TO-220FP/TO-247 Zener-Protected SuperMESH??ower MOSFET

Description The SuperMESH? series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH? layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.

文件:458.81 Kbytes 頁數(shù):11 Pages

意法半導(dǎo)體

P10NK80Z

型號(hào):STP10NK80Z;Package:TO-220;N-channel 800 V, 0.78 Ω, 9 A Zener-protected SuperMESH? Power MOSFETs in TO-220, TO-220FP and TO-247 packages

Description These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH? technology, achieved through optimization of ST's well established strip-based PowerMESH? layout. In addition to a significant reduction in onresistance, this device is design

文件:444.1 Kbytes 頁數(shù):17 Pages

意法半導(dǎo)體

P10NK80ZFP

型號(hào):STP10NK80ZFP;Package:TO-220FP;N-CHANNEL 800V - 0.78ohm - 9A TO-220/TO-220FP/TO-247 Zener-Protected SuperMESH??ower MOSFET

Description The SuperMESH? series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH? layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.

文件:458.81 Kbytes 頁數(shù):11 Pages

意法半導(dǎo)體

P10NK80ZFP

型號(hào):STP10NK80ZFP;Package:TO-220FP;N-channel 800 V, 0.78 Ω, 9 A Zener-protected SuperMESH? Power MOSFETs in TO-220, TO-220FP and TO-247 packages

Description These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH? technology, achieved through optimization of ST's well established strip-based PowerMESH? layout. In addition to a significant reduction in onresistance, this device is design

文件:444.1 Kbytes 頁數(shù):17 Pages

意法半導(dǎo)體

P10N60CAFJ

型號(hào):SVFP10N60CAFJ;Package:TO-220FJ-3L;10A, 600V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVFP10N60CAFJ/FJH is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistan

文件:291.74 Kbytes 頁數(shù):8 Pages

士蘭微

P10N60CAFJ

型號(hào):SVFP10N60CAFJ;Package:TO-220FJ-3L;10A, 600V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVFP10N60CAFJ/FJH is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistan

文件:291.75 Kbytes 頁數(shù):8 Pages

士蘭微

P10N60CAFJ

型號(hào):SVFP10N60CAFJ;Package:TO-220FJ-3L;10A, 600V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVFP10N60CAFJ/FJH is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistan

文件:291.72 Kbytes 頁數(shù):8 Pages

士蘭微

詳細(xì)參數(shù)

  • 型號(hào):

    P10

  • 功能描述:

    開關(guān)晶體管 - 偏壓電阻器 150MW 4.7K 22K

  • RoHS:

  • 制造商:

    ON Semiconductor

  • 晶體管極性:

    NPN/PNP

  • 安裝風(fēng)格:

    SMD/SMT

  • 封裝/箱體:

    直流集電極/Base Gain hfe

  • Min:

    200 mA

  • 最大工作頻率:

    集電極—發(fā)射極最大電壓

  • VCEO:

    50 V

  • 集電極連續(xù)電流:

    150 mA

  • 功率耗散:

    200 mW

  • 封裝:

    Reel

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
Diodes
24+
SOT-523
7500
詢價(jià)
DIODESINC
23+
NA
14486
專做原裝正品,假一罰百!
詢價(jià)
DIODES
1809+
SOT-523
6675
就找我吧!--邀您體驗(yàn)愉快問購元件!
詢價(jià)
DIODES/美臺(tái)
23+
SOT-523
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價(jià)
DIODES
22+
NA
12080
加我QQ或微信咨詢更多詳細(xì)信息,
詢價(jià)
Diodes Inc
2022+
原廠原包裝
8600
全新原裝 支持表配單 中國(guó)著名電子元器件獨(dú)立分銷
詢價(jià)
DIODES/美臺(tái)
24+
NA/
36000
優(yōu)勢(shì)代理渠道,原裝正品,可全系列訂貨開增值稅票
詢價(jià)
DIODES
23+
SOT-523
7300
專注配單,只做原裝進(jìn)口現(xiàn)貨
詢價(jià)
DIODES INC.
2023+
SMD
12000
安羅世紀(jì)電子只做原裝正品貨
詢價(jià)
DIODES
23+
SOT-523
7300
專注配單,只做原裝進(jìn)口現(xiàn)貨
詢價(jià)
更多P10供應(yīng)商 更新時(shí)間2025-8-5 16:30:00