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型號(hào)：2N2222AU；Package：SOT-323；General Purpose Transistor

General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SC-323/SC?70 package which is designed for low power surface mount applications. Features ? We declare that the material of product compliance with RoHS requ

文件：331.91 Kbytes 頁(yè)數(shù)：3 Pages

FS

型號(hào)：74AUP2G241GN；Package：SOT1116；Low-power dual buffer/line driver; 3-state

1. General description The 74AUP2G241 provides a dual non-inverting buffer/line driver with 3-state outputs. The 3-state outputs are controlled by the output enable inputs 1OE and 2OE. A HIGH level at pin 1OE causes output 1Y to assume a high-impedance OFF-state. A LOW level at pin 2OE causes o

文件：309.77 Kbytes 頁(yè)數(shù)：21 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

型號(hào)：74AUP2G241GS；Package：SOT1203；Low-power dual buffer/line driver; 3-state

1. General description The 74AUP2G241 provides a dual non-inverting buffer/line driver with 3-state outputs. The 3-state outputs are controlled by the output enable inputs 1OE and 2OE. A HIGH level at pin 1OE causes output 1Y to assume a high-impedance OFF-state. A LOW level at pin 2OE causes o

文件：309.77 Kbytes 頁(yè)數(shù)：21 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

型號(hào)：BFG21W；Package：SOT-343R；UHF power transistor

DESCRIPTION NPN double polysilicon bipolar power transistor with buried layer for low voltage medium power applications encapsulated in a plastic, 4-pin dual-emitter SOT343R package. FEATURES ? High power gain ? High efficiency ? 1.9 GHz operating area ? Linear and non-linear operation. APP

文件：116.31 Kbytes 頁(yè)數(shù)：12 Pages

PHI

飛利浦

型號(hào)：BFG21W；Package：SOT-343R；RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 頁(yè)數(shù)：130 Pages

恩XP

型號(hào)：ESD05V10D-LC；Package：DFN-10-4.1x2x0.5-0.8；Transient Voltage Suppressors for ESD Protection

Features 125 Watts Peak Pulse Power per Line (tp=8/20μs) Protects two or four I/O lines Low capacitance: 0.2pF typical (I/O to I/O) Low operating voltage: 5V RoHS Compliant IEC61000-4-2 (ESD) ±15kV (air), ±8kV (contact) IEC61000-4-4 (EFT) 40A (5/50ηs) IEC61000-4-5 (Lightning) 5A (8/20μs)

文件：2.82045 Mbytes 頁(yè)數(shù)：5 Pages

UNSEMI

優(yōu)恩半導(dǎo)體

型號(hào)：FCX591；Package：SOT-89；PNP Silicon Planar Medium Power High Perormance Transistor

FEATURES ● Complementary type:FCX491.

文件：137.49 Kbytes 頁(yè)數(shù)：3 Pages

BILIN

銀河微電

型號(hào)：FCX591；Package：SOT-89；PNP Transistors

■ Features ● Collector Current Capability IC=-1A ● Collector Emitter Voltage VCEO=-60V

文件：413.83 Kbytes 頁(yè)數(shù)：1 Pages

KEXIN

科信電子

型號(hào)：FCX591；Package：SOT-89-3L；SOT-89-3L Plastic-Encapsulate Transistors

FEATURES Power dissipation

文件：1.43793 Mbytes 頁(yè)數(shù)：3 Pages

DGNJDZ

南晶電子

型號(hào)：FMP1；Package：SMD5；Switching diode

Features High reliability Small mold type High Speed switching Application High speed switching

文件：174.91 Kbytes 頁(yè)數(shù)：3 Pages

ROHM

羅姆