最新无码a∨在线观看,一本av高清一区二区三区,亚洲熟妇色l20p,宅男噜噜69av,中出あ人妻熟女中文字幕

NXH80B120L2Q0

功率集成模塊，雙升壓，1200 V，40 A，IGBT + 1200 V，30 A 硅二極管; ? IGBT Specifications: VCE(SAT) = 2.2 V, ESW = 2830 u\u0002J\n? Fast IGBT with low VCE(SAT) for high efficiency\n? 25 A / 1600 V Bypass and Anti?parallel Diodes\n? Low VF bypass diodes for excellent efficiency in bypass mode\n? Si Rectifier Specification: VF = 2.4 V, IRRM = 53 A\n? Si Diode for moderate speed switching\n? Solderable Pins\n? Easy mounting\n? Dual Boost 40 A / 1200 V IGBT + Si Rectifier Module\n? Thermistor\n;

The NXH80B120L2Q0SG is a power module containing a dual boost stage consisting of two 40A/1200V IGBTs, two 30A/1200V silicon diodes,and two 25A/1600V anti-parallel diodes for the IGBTs. Two additional 25A/1600V bypass rectifiers used for inrush current limit are included. An on-board thermistor is included.

NXH80B120L2Q0

Q0 - Dual Boost Power Module

NXH80B120L2Q0SG

Marking：NXH80B120L2Q0SG；Package：Q0BOOST；Q0 - Dual Boost Power Module

NXH80B120L2Q0SNG

Marking：NXH80B120L2Q0SNG；Package：Q0BOOST；Q0 - Dual Boost Power Module