描述 Description

The NXH200T120H3Q2 is a power integrated module (PIM) containing a split T-type neutral point clamped three-level inverter, consisting of two 200A/1200V half-bridge IGBTs with inverse diodes, two neutral point 100A/650V SiC diodes, two 150A/650V neutral point IGBTs with inverse diodes, two half-bridge 150A/1200V rectifiers and a negative temperature coefficient thermistor (NTC).

特性 Features

? Low VCE(SAT) fast switching IGBTs combined with SiC diodes in neutral point
? Highest levels of power density and efficiency
? Low thermal resistance baseplate
? High robustness under short term high power conditions
? Solar pins
? Mounting without press-fit tooling
? Thermal Interface Material and Ni-plated DBC

應(yīng)用 Application

? DC-AC Stage
? Solar Inverter
? UPS
? Energy Storage Systems

簡介

NXH200T120H3Q2F2STNG屬于分立半導(dǎo)體產(chǎn)品的晶體管-IGBT-模塊。由制造生產(chǎn)的NXH200T120H3Q2F2STNG晶體管 - IGBT - 模塊絕緣柵雙極晶體管 (IGBT) 是三端功率半導(dǎo)體器件，主要用作電子開關(guān)，兼具高效率和快速切換優(yōu)點(diǎn)。作為模塊，IGBT 配置為非對稱式橋； 升壓、降壓和制動斬波器；全橋、三電平和三相逆變器。有些器件內(nèi)置了用于監(jiān)控溫度的 NTC 熱敏電阻。IGBT 模塊可根據(jù)最大功率、集電極電流、集射擊穿電壓和配置進(jìn)行區(qū)分。