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THN6301KF

NPNSiGeRFTRANSISTOR

THN6301KF

SiGeNPNTransistor

□Features oLowNoiseFigure NF=1.1dBatf=1GHz,VCE=8V,IC=5mA oHighPowerGain MAG=18dBatf=1GHz,VCE=8V,IC=15mA oHighTransitionFrequency fT=10GHzatVCE=8V,IC=15mA □Application LNAandwidebandamplifieruptoGHzrange

THN6301S

NPNPlanerRFTRANSISTOR

[TachyonicsCO,.LTD] □Features oLowNoiseFigure NF=1.1dBTyp.@f=1GHz,VCE=8V,IC=5mA oHighPowerGain MAG=18dBTyp.@f=1GHz,VCE=8V,IC=15mA oHighTransitionFrequency fT=10GHzTyp.@VCE=8V,IC=15mA □Application LNAandwidebandampli

THN6301S

SiGeNPNTransistor

□Features oLowNoiseFigure NF=1.1dBatf=1GHz,VCE=8V,IC=5mA oHighPowerGain MAG=18dBatf=1GHz,VCE=8V,IC=15mA oHighTransitionFrequency fT=10GHzatVCE=8V,IC=15mA □Application LNAandwidebandamplifieruptoGHzrange

THN6301S

NPNSiGeRFTRANSISTOR

THN6301U

NPNSiGeRFTRANSISTOR

THN6301U

NPNPlanerRFTRANSISTOR

[TachyonicsCO,.LTD] □Features oLowNoiseFigure NF=1.1dBTyp.@f=1GHz,VCE=8V,IC=5mA oHighPowerGain MAG=18dBTyp.@f=1GHz,VCE=8V,IC=15mA oHighTransitionFrequency fT=10GHzTyp.@VCE=8V,IC=15mA □Application LNAandwidebandampli

THN6301U

SiGeNPNTransistor

□Features oLowNoiseFigure NF=1.1dBatf=1GHz,VCE=8V,IC=5mA oHighPowerGain MAG=18dBatf=1GHz,VCE=8V,IC=15mA oHighTransitionFrequency fT=10GHzatVCE=8V,IC=15mA □Application LNAandwidebandamplifieruptoGHzrange

THN6301Z

SiGeNPNTransistor

□Features oLowNoiseFigure NF=1.1dBatf=1GHz,VCE=8V,IC=5mA oHighPowerGain MAG=18dBatf=1GHz,VCE=8V,IC=15mA oHighTransitionFrequency fT=10GHzatVCE=8V,IC=15mA □Application LNAandwidebandamplifieruptoGHzrange

THN6301Z

NPNSiGeRFTRANSISTOR