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NVH4L045N065SC1

絲印：H4L045065SC1；Package：TO247-4L；MOSFET - SiC Power, Single N-Channel, TO247-4L 650 V, 33 m, 55 A

Features ?Typ.RDS(on)=33m@VGS=18VTyp.RDS(on)=45m@VGS=15V ?UltraLowGateCharge(QG(tot)=105nC) ?HighSpeedSwitchingwithLowCapacitance(Coss=162pF) ?100AvalancheTested ?AEC?Q101QualifiedandPPAPCapable ?ThisDeviceisPb?FreeandisRoHSCompliant

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NVH4L045N065SC1

Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 33 mohm, 650V, M2, TO247?4L; ? Qualified for Automotive According to AEC?Q101\n? Automotive grade\n? 650V rated\n? Max RDS(on) = 50 mΩ at Vgs = 18V, Id = 25A\n? High Speed Switching and Low Capacitance\n? 100% UIL Tested\n? Devices are RoHS Compliant\n;

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTH4L045N065SC1

SiliconCarbide(SiC)MOSFET–EliteSiC,33mohm,650V,M2,TO-247-4L

Features ?Typ.RDS(on)=33m@VGS=18V Typ.RDS(on)=45m@VGS=15V ?UltraLowGateCharge(QG(tot)=105nC) ?HighSpeedSwitchingwithLowCapacitance(Coss=162pF) ?100AvalancheTested ?TJ=175°C ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Fr

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTH4L045N065SC1

SiliconCarbideSiCMOSFET-33mohm,650V,M2,TO-247-4L

Features ?Typ.RDS(on)=33m@VGS=18V Typ.RDS(on)=45m@VGS=15V ?UltraLowGateCharge(QG(tot)=105nC) ?HighSpeedSwitchingwithLowCapacitance(Coss=162pF) ?100AvalancheTested ?TJ=175°C ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Fr

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

技術(shù)參數(shù)

  • Pb-free：

    Pb

  • AEC Qualified：

    A

  • Halide free：

    H

  • PPAP Capablee：

    P

  • Status：

    Active

  • Channel Polarity：

    N-Channel

  • Configuration：

    Single

  • Blocking Voltage BVDSS (V)：

    650

  • ID(max) (A)：

    55

  • RDS(on) Typ @ 25°C (mΩ)：

    33

  • Qg Total (C)：

    105

  • Output Capacitance (C)：

    162

  • Tj Max (°C)：

    175

  • Package Type：

    TO-247-4

供應(yīng)商型號品牌批號封裝庫存備注價格
onsemi(安森美)
24+
TO-247-4
7814
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
 詢價
24+
N/A
46000
一級代理-主營優(yōu)勢-實(shí)惠價格-不悔選擇
 詢價
onsemi
2025+
TO-247-4
55740
詢價
ON
24+
NA
3000
進(jìn)口原裝 假一罰十 現(xiàn)貨
 詢價
onsemi
21+
410
只做原裝,優(yōu)勢渠道 ,歡迎實(shí)單聯(lián)系
 詢價
onsemi
23+
TO-247-4L
1356
原廠正品現(xiàn)貨SiC MOSFET全系列
 詢價
ONN
2324+
5670
原裝正品,超低價出售
 詢價
ON(安森美)
23+
NA
20094
正納10年以上分銷經(jīng)驗(yàn)原裝進(jìn)口正品做服務(wù)做口碑有支持
 詢價
ONSEMI
22
SOP12
6000
全新、原裝
 詢價
ON(安森美)
23+
標(biāo)準(zhǔn)封裝
8000
正規(guī)渠道,只有原裝!
 詢價
更多NVH4L045N065SC1供應(yīng)商 更新時間2025-7-29 16:12:00

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