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NTP60N06G

60 V, 60 A, N-Channel TO-220 and D2PAK

ONSEMION Semiconductor

安森美半導體安森美半導體公司

NTP60N06G

N-Channel 60-V (D-S) MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體(臺灣)有限公司

NTP60N06L

PowerMOSFET60Amps,60Volts,LogicLevelN??hannelTO??20andD2PAK

ONSEMION Semiconductor

安森美半導體安森美半導體公司

NTP60N06LG

PowerMOSFET60Amps,60Volts,LogicLevelN??hannelTO??20andD2PAK

ONSEMION Semiconductor

安森美半導體安森美半導體公司

NVB60N06

MOSFET–Power,N-Channel,D2PAK60V,60A

Designedforlowvoltage,highspeedswitchingapplicationsin powersupplies,convertersandpowermotorcontrolsandbridge circuits. Features ?AEC?Q101QualifiedandPPAPCapable?NVB60N06 ?TheseDevicesarePb?FreeandareRoHSCompliant TypicalApplications ?PowerSupplies ?C

ONSEMION Semiconductor

安森美半導體安森美半導體公司

OM60N06SA

LOWVOLTAGE,LOWRDS(on)POWERMOSFETSINHERMETICISOLATEDPACKAGE

DESCRIPTION ThisseriesofhermeticpackagedMOSFETsareideallysuitedforlowvoltageapplications;batterypoweredvoltagepowersupplies,motorcontrols,dctodcconvertersandsynchronousrectification.Thelowconductionlossallowssmallerheatsinkingandthelowgatechargesimplerdr

IRF

International Rectifier

P60N06

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR

■TYPICALRDS(on)=0.0172 ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE ■VERYLOWRDS(on) ■APPLICATIONORIENTED CHARACTERIZATION APPLICATIONS ■HIGHCURRENT,HIGHSPEE

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

PHB60N06LT

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=58A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=18mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

PHB60N06LT

TrenchMOStransistorLogiclevelFET

GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. Thedevicehasverylowon-stateresistance.Itisintendedforuseindctodcconvertersandgeneralpurposeswitchingapplications. ThePHP60N06LTissu

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

PHB60N06T

TrenchMOStransistorStandardlevelFET

GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemounting.Using’trench’technologythedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.Itisintended

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

詳細參數

  • 型號:

    NTP60N06G

  • 功能描述:

    MOSFET 60V 60A N-Channel

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應商型號品牌批號封裝庫存備注價格
ON/安森美
17+
TO-2203LEADSTANDARD
31518
原裝正品 可含稅交易
詢價
ON
24+
TO-2203LEADSTANDA
8866
詢價
ON
23+
TO-220
9526
詢價
ON
23+
TO-220-3
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
詢價
ON
25+23+
TO220
73094
絕對原裝正品現(xiàn)貨,全新深圳原裝進口現(xiàn)貨
詢價
ON
6000
面議
19
TO-2203LEA
詢價
ON
20+
TO-2203LEADSTANDA
36900
原裝優(yōu)勢主營型號-可開原型號增稅票
詢價
ON/安森美
23+
TO-2203LEADSTANDA
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價
VBsemi
23+
TO-220
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價
VB
21+
TO-220AB
10000
原裝現(xiàn)貨假一罰十
詢價
更多NTP60N06G供應商 更新時間2025-7-22 14:00:00