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NTHL160N120SC1

Silicon Carbide (SiC) MOSFET – 20 mohm, 1200V, M1, TO-247-3L

Features ?Typ.RDS(on)=20m ?UltraLowGateCharge(QG(tot)=203nC) ?Capacitance(Coss=260pF) ?100UILTested ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) TypicalApplications ?UPS ?DC?DCConverter ?Boos

ONSEMION Semiconductor

安森美半導體安森美半導體公司

NTHL160N120SC1

Silicon Carbide (SiC) MOSFET – 160 mohm, 1200V, M1, TO-247-3L

Features ?Typ.RDS(on)=160m ?UltraLowGateCharge(QG(tot)=34nC) ?LowEffectiveOutputCapacitance(Coss=50pF) ?100UILTested ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) TypicalApplications ?UPS ?DC?

ONSEMION Semiconductor

安森美半導體安森美半導體公司

NTHL160N120SC1

Silicon Carbide (SiC) MOSFET – EliteSiC, 160 mohm, 1200V, M1, TO-247-3L

Features ?Typ.RDS(on)=160m ?UltraLowGateCharge(QG(tot)=34nC) ?LowEffectiveOutputCapacitance(Coss=50pF) ?100UILTested ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) TypicalApplications ?UPS ?DC?

ONSEMION Semiconductor

安森美半導體安森美半導體公司

NTHL160N120SC1

Silicon Carbide (SiC) MOSFET – EliteSiC, 20mohm, 1200V, M1, TO-247-3L

Features ?Typ.RDS(on)=20m ?UltraLowGateCharge(QG(tot)=203nC) ?Capacitance(Coss=260pF) ?100UILTested ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) TypicalApplications ?UPS ?DC?DCConverter ?Boost

ONSEMION Semiconductor

安森美半導體安森美半導體公司

NTHL160N120SC1

Marking：NTHL160N120SC1；Package：TO-247；MOSFET - SiC Power, Single N-Channel 1200 V, 160 m, 17 A

ONSEMION Semiconductor

安森美半導體安森美半導體公司

NTHL160N120SC1_V01

Silicon Carbide (SiC) MOSFET – 160 mohm, 1200V, M1, TO-247-3L

Features ?Typ.RDS(on)=160m ?UltraLowGateCharge(QG(tot)=34nC) ?LowEffectiveOutputCapacitance(Coss=50pF) ?100UILTested ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) TypicalApplications ?UPS ?DC?

ONSEMION Semiconductor

安森美半導體安森美半導體公司

NTHL160N120SC1_V02

Silicon Carbide (SiC) MOSFET – EliteSiC, 160 mohm, 1200V, M1, TO-247-3L

Features ?Typ.RDS(on)=160m ?UltraLowGateCharge(QG(tot)=34nC) ?LowEffectiveOutputCapacitance(Coss=50pF) ?100UILTested ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) TypicalApplications ?UPS ?DC?

ONSEMION Semiconductor

安森美半導體安森美半導體公司

供應商型號品牌批號封裝庫存備注價格
onsemi(安森美)
24+
TO-247
7814
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
 詢價
ON(安森美)
23+
TO-247
11402
公司只做原裝正品,假一賠十
 詢價
ON
2024+
N/A
70000
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng)
 詢價
ON(安森美)
2511
TO-247
8500
電子元器件采購降本 30%!盈慧通原廠直采,砍掉中間差價
 詢價
ON
24+
NA
3000
進口原裝 假一罰十 現(xiàn)貨
 詢價
ON(安森美)
23+
標準封裝
8000
正規(guī)渠道,只有原裝!
 詢價
ON/安森美
22+
24000
原裝正品現(xiàn)貨,實單可談,量大價優(yōu)
 詢價
ONSEMI
22+
SMD
450
詢價
onsemi
23+
TO-247-3LD
1356
原廠正品現(xiàn)貨SiC MOSFET全系列
 詢價
ON(安森美)
23+
標準封裝
5000
原廠原裝現(xiàn)貨訂貨價格優(yōu)勢終端BOM表可配單提供樣品
 詢價
更多NTHL160N120SC1供應商 更新時間2025-7-23 16:12:00

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