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NVBG080N120SC1

SiliconCarbide(SiC)MOSFET–80mohm,1200V,M1,D2PAK-7L

Features ?Typ.RDS(on)=80m ?UltraLowGateCharge(Typ.QG(tot)=56nC) ?LowEffectiveOutputCapacitance(Typ.Coss=79pF) ?100AvalancheTested ?AEC?Q101QualifiedandPPAPCapable ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevel

ONSEMION Semiconductor

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NVBG080N120SC1

MOSFET??SiCPower,SingleN-Channel,D2PAK-7L

ONSEMION Semiconductor

安森美半導體安森美半導體公司

NVC080N120SC1

MOSFET??N??hannel,SiliconCarbide1200V,80m

Description SiliconCarbide(SiC)MOSFETusesacompletelynewtechnology thatprovidesuperiorswitchingperformanceandhigherreliability comparedtoSilicon.Inaddition,thelowONresistanceandcompact chipsizeensurelowcapacitanceandgatecharge.Consequently, systembenefitsincl

ONSEMION Semiconductor

安森美半導體安森美半導體公司

NVHL080N120SC1

SiliconCarbide(SiC)MOSFET–80mohm,1200V,M1,TO-247-3L

Features ?Typ.RDS(on)=80m ?UltraLowGateCharge(typ.QG(tot)=56nC) ?LowEffectiveOutputCapacitance(typ.Coss=80pF) ?100UILTested ?AEC?Q101QualifiedandPPAPCapable ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterc

ONSEMION Semiconductor

安森美半導體安森美半導體公司

NVHL080N120SC1

MOSFET-SiCPower,SingleN-Channel

ONSEMION Semiconductor

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NVHL080N120SC1A

MOSFET-SiCPower,SingleN-Channel

ONSEMION Semiconductor

安森美半導體安森美半導體公司

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