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NTHL041N60S5H

Power MOSFET, N-Channel, SUPERFET? V, FAST, 600 V, 57 A, 41 mΩ, TO-247; ? Ultra Low Gate Charge (Typ. Qg = 108 nC)\n? Low switching loss\n? Low Effective Output Capacitance (Typ. Coss(eff.) = 643 pF)\n? Low switching loss\n? Fast switching performance with robust body diode\n? Low switching loss and higher system reliability\n? 650 V @ TJ = 150°C\n? Typ. RDS(on) = 32.8 m Ω\n? 100% Avalanche Tested\n? RoHS Compliant\n? Internal Gate Resistance: 0.6 Ω\n;

The SUPERFET V MOSFET is the fifth generation high voltage super?junction (SJ) MOSFET family from ON Semiconductor. SUPERFET V delivers best?in?class FOMs (RDS(ON)·QG and RDS(ON)·EOSS) to improve not only heavy load but also light load efficiency. The 600 V SUPERET V series provides design benefits through reduced conduction and switching losses, while supporting extreme MOSFET dVDS/dt ratings at 120 V/ns. Consequently, the SUPERFET V MOSFET FAST series helps maximize system efficiency and power density.

NTHL041N60S5H

Marking：T041N60S5H；Package：TO-247；MOSFET - Power, Single N-Channel, SUPERFET V, FAST, TO247-3L 600 V, 41 m, 57 A