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NTE331

Silicon Complementary Transistors Audio Power Amp, Switch

Description: TheNTE331(NPN)andNTE332(PNP)aresiliconepitaxial–basecomplementarypowertransistorsinaTO–220plasticpackageintendedforuseinpowerlinearandswitchingapplications.

NTE331

Complementary Transistors;

NTE3310

Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch

Features: ?HighInputImpedance ?HighSpeed ?LowSaturationVoltage ?EnhancementMode Applications: ?HighPowerSwitching ?MotorControl

NTE3311

Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch

Features: ?HighInputImpedance ?HighSpeed ?LowSaturationVoltage ?EnhancementMode Applications: ?HighPowerSwitching ?MotorControl

NTE3311

IGBTs;

Features:\n? High Input Impedance\n? High Speed\n? Low Saturation Voltage\n? Enhancement ModeApplications:\n? High Power Switching\n? Motor Control

NTE3312

Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch;

Features:\n? High Input Impedance\n? High Speed\n? Low Saturation Voltage\n? Enhancement ModeApplications:\n? High Power Switching\n? Motor Control

NTE3312

Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch

Features: ?HighInputImpedance ?HighSpeed ?LowSaturationVoltage ?EnhancementMode Applications: ?HighPowerSwitching ?MotorControl