NTE2102中文資料NTE數(shù)據(jù)手冊PDF規(guī)格書
NTE2102規(guī)格書詳情
Description:
The NTE2101 is a high–speed 1024 x 1 bit static random access read/write memory in a 16–Lead DIP type package designed using N–Channel depletion mode silicon gate technology. Static storage cells eliminate the need for clock or refresh circuitry.
Low threshold silicon gate N–Channel technology allows complete DTL/TTL compatibility of all inputs and outputs as well as a single 5V supply. The separate chip enable input (CE) controlling the output allows easy memory expansion by OR–tying individual devices to a data bus. Data in and data out have the same polarity.
Features:
? Single 5V Supply
? All Inputs and Outputs Directly DTL/TTL Compatible
? Static Operation – No Clocks or Refresh
? All Inputs Protected Against Static Charge
? 350ns Access Time
產(chǎn)品屬性
- 型號：
NTE2102
- 制造商：
NTE Electronics
- 功能描述：
IC-MOS 1K SRAM
- 功能描述：
IC, SRAM, 1KBIT, SERIAL, 350NS, 16-DIP; Memory
- Size：
1Kbit; Memory
- Configuration：
1K x 1; Supply Voltage
- Min：
4.75V; Supply Voltage
- Max：
5.25V; Memory Case
- Style：
DIP; No. of
- Pins：
16; Access
- Time：
350ns; Operating Temperature
- Min：
0C
- 功能描述：
SRAM Chip Async Single 5V 1K-Bit 1K x 1 350ns 16-Pin PDIP
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
OTAX |
23+ |
NA |
20000 |
全新原裝假一賠十 |
詢價 | ||
NTE |
2450+ |
TO-3P |
6540 |
只做原裝正品現(xiàn)貨或訂貨!終端客戶免費申請樣品! |
詢價 | ||
SANYO/三洋 |
22+ |
TO-3P |
12245 |
現(xiàn)貨,原廠原裝假一罰十! |
詢價 | ||
新 |
37 |
全新原裝 貨期兩周 |
詢價 | ||||
NTE |
23+ |
TO-3 |
39250 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | ||
SANYO/三洋 |
24+ |
TO-3P |
39197 |
鄭重承諾只做原裝進口現(xiàn)貨 |
詢價 | ||
OTAX |
DIP-3 |
35560 |
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨 |
詢價 | |||
NTE |
23+ |
65480 |
詢價 | ||||
NTE |
22+ |
NA |
500000 |
萬三科技,秉承原裝,購芯無憂 |
詢價 | ||
SANYO |
24+ |
TO-3P |
36500 |
原裝現(xiàn)貨/放心購買 |
詢價 |
