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NTBG022N120M3S

絲?。?a target="_blank" title="Marking" href="/bg022n120m3s/marking.html">BG022N120M3S；Package：D2PAK-7L；MOSFET - Silicon Carbide (SiC), Single N-Channel, M3, D2PAK-7L 1200 V, 22 m, 58 A

Features ?Typ.RDS(on)=22m ?Lowswitchinglosses(Typ.EON485Jat40A,800V) ?100AvalancheTested ?TheseDevicesareRoHSCompliant TypicalApplications ?SolarInverters ?ElectricVehicleChargingStations ?UninterruptiblePowerSupplies(UPS) ?EnergyStorageSystems

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTBG022N120M3S

Silicon Carbide (SiC) MOSFET – 22mohm, 1200V, M3, D2PAK-7L

Features ?Typ.RDS(on)=22m ?Lowswitchinglosses(Typ.EON485Jat40A,800V) ?100AvalancheTested ?TheseDevicesareRoHSCompliant TypicalApplications ?SolarInverters ?ElectricVehicleChargingStations ?UninterruptiblePowerSupplies(UPS) ?EnergyStorageSystems

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTBG022N120M3S

Silicon Carbide (SiC) MOSFET - EliteSiC, 22mohm, 1200V, M3S, D2PAK-7L

Features ?Typ.RDS(on)=22m ?UltraLowGateCharge(QG(tot)=151nC) ?HighSpeedSwitchingwithLowCapacitance(Coss=146pF) ?100AvalancheTested ?TheseDevicesareRoHSCompliant TypicalApplications ?SolarInverters ?ElectricVehicleChargingStations ?Uninterruptible

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTBG022N120M3S

SiC N-Channel MOSFET

FEATURES ·Typ.RDS(on)=960mΩ ·100AvalancheTested ·RoHSCompliant APPLICATIONS ·SolarInverters ·ElectricVehicleChargingStations ·UninterruptiblePowerSupplies(UPS) ·EnergyStorageSystems ·SwitchModePowerSupplies(SMPS)

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

NTBG022N120M3S

Silicon Carbide (SiC) MOSFET - EliteSiC, 22 mohm, 1200 V, M3S, D2PAK-7L

The new family of 1200V M3S planar SiC MOSFETs is optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This family has optimum performance when driven with 18V gate drive but also works well with 15V gate drive.; ? D2PAK-7L package for low common source inductance\n? Reduced EON losses\n? 15V to 18V Gate Drive\n? 18V for best performance; 15V for compatibility with IGBT driver circuits\n? New M3S technology: 22mohm RDS(ON) with low EON and EOFF losses\n? Improved power density\n? 100% Avalanche Tested\n?;

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTBG022N120M3S_V01

Silicon Carbide (SiC) MOSFET – 22mohm, 1200V, M3, D2PAK-7L

Features ?Typ.RDS(on)=22m ?Lowswitchinglosses(Typ.EON485Jat40A,800V) ?100AvalancheTested ?TheseDevicesareRoHSCompliant TypicalApplications ?SolarInverters ?ElectricVehicleChargingStations ?UninterruptiblePowerSupplies(UPS) ?EnergyStorageSystems

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTBG022N120M3S_V02

Silicon Carbide (SiC) MOSFET - EliteSiC, 22mohm, 1200V, M3S, D2PAK-7L

Features ?Typ.RDS(on)=22m ?UltraLowGateCharge(QG(tot)=151nC) ?HighSpeedSwitchingwithLowCapacitance(Coss=146pF) ?100AvalancheTested ?TheseDevicesareRoHSCompliant TypicalApplications ?SolarInverters ?ElectricVehicleChargingStations ?Uninterruptible

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
ON/安森美
22+
24000
原裝正品現(xiàn)貨,實(shí)單可談,量大價(jià)優(yōu)
 詢價(jià)
onsemi
23+
D2PAK-7L
1356
原廠正品現(xiàn)貨SiC MOSFET全系列
 詢價(jià)
ON Semiconductor
23+/22+
790
原裝進(jìn)口訂貨7-10個(gè)工作日
 詢價(jià)
24+
N/A
47000
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇
 詢價(jià)
onsemi
2025+
TO-263-7 (D2PAK7)
55740
詢價(jià)
ON
22+
NA
598
原裝正品支持實(shí)單
 詢價(jià)
ON Semiconductor
2024
800
全新、原裝
 詢價(jià)
Onsemi/安森美
23+
TO263
3050
專業(yè)幫助客戶找貨 配單,誠(chéng)信可靠!
 詢價(jià)
ON
24+
NA
3000
進(jìn)口原裝 假一罰十 現(xiàn)貨
 詢價(jià)
ON
25+
SOT23
2400
原廠原裝,價(jià)格優(yōu)勢(shì)
 詢價(jià)
更多NTBG022N120M3S供應(yīng)商 更新時(shí)間2025-7-31 15:01:00

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