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NSF080120L4A0

Marking：NSF0812A0；Package：SOT8071-1；1200 V, 80 mOhm, N-channel SiC MOSFET

1.Generaldescription TheNSF080120L4A0isaSiliconCarbidebased1200VpowerMOSFETinawell-established 4-pinTO-247plasticpackageforthroughholePCBmountingtechnology.TheexcellentRDSon temperaturestabilitycombinedwithitsfastswitchingspeedmakesitaproductofchoiceinh

NSF080120L4A0

1200 V, 80 mΩ, N-channel SiC MOSFET; ? Excellent RDSon temperature stability\r\n? Very low switching losses\r\n? Fast reverse recovery\r\n? Fast switching speed\r\n? Temperature independent turn-off switching losses\r\n? Very fast and robust intrinsic body diode\r\n? Faster commutation and improved switching due to the additional Kelvin source pin.\r;

The NSF080120L4A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 4-pin TO-247 plastic package for through hole PCB mounting technology. The excellent RDSon temperature stability combined with its fast switching speed makes it a product of choice in high power and high voltage industrial applications like E-vehicle charging infrastructure, photovoltaic inverters and motor drives.