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NSF060120L3A0

Marking：NSF0612A0；Package：SOT429-2；1200 V, 60 mΩ, N-channel SiC MOSFET

1.Generaldescription TheNSF060120L3A0isaSiliconCarbidebased1200VpowerMOSFETinawell-established3- pinTO-247-3LplasticpackageforthroughholePCBmountingtechnology.TheexcellentRDSon temperaturestabilitycombinedwithitsfastswitchingspeedmakesitaproductofchoice

NSF060120L3A0

1200 V, 60 mΩ, N-channel SiC MOSFET; ? Excellent RDSon temperature stability\r\n? Very low switching losses\r\n? Fast reverse recovery\r\n? Fast switching speed\r\n? Temperature independent turn-off switching losses\r\n? Very fast and robust intrinsic body diode;

The NSF060120L3A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 3- pin TO-247-3L plastic package for through hole PCB mounting technology. The excellent RDSon temperature stability combined with its fast switching speed makes it a product of choice in high power and high voltage industrial applications like E-vehicle charging infrastructure, photovoltaic inverters and motor drives.