描述 Description

This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.

特性 Features

? Simplifies Circuit Design
? Reduces Board Space
? Reduces Component Count
? S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
? These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant

簡介

NSBC123EF3屬于分立半導(dǎo)體產(chǎn)品的晶體管-雙極（BJT）-單預(yù)偏置。由制造生產(chǎn)的NSBC123EF3晶體管 - 雙極（BJT）- 單，預(yù)偏置預(yù)偏置雙極晶體管具有內(nèi)部電阻器，設(shè)計(jì)用于在未施加輸入信號(hào)的情況下將器件保持在偏置或工作點(diǎn)附近。晶體管偏置可使晶體管更有效地工作，并產(chǎn)生穩(wěn)定、無失真的輸出信號(hào)。預(yù)偏置晶體管減少了所需的外部電路元器件數(shù)量，從而可降低項(xiàng)目成本。