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首頁(yè) >NRVBA160T3G整流器件>規(guī)格書(shū)列表

零件編號(hào)	下載訂購(gòu)	功能描述/絲印	制造商上傳企業(yè)	LOGO
LMBR160T3G	文件：256.25 Kbytes Page：3 Pages	SurfaceMountSchottkyPowerRectifierPlasticSOD??23Package	LRCLeshan Radio Company 樂(lè)山無(wú)線電樂(lè)山無(wú)線電股份有限公司	LRC
MBRA160T3	文件：71.44 Kbytes Page：2 Pages	ChipSchottkyBarrierDiodes-Siliconepitaxialplanertype Siliconepitaxialplanertype Features ?PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-OUtilizingFlameRetardantEpoxyMoldingCompound. ?Forsurfacemountedapplications. ?ExceedsenvironmentalstandardsofMIL-S-19500/228 ?Lowleakagecurrent.	FORMOSAFormosa MS 美麗微半導(dǎo)體美麗微半導(dǎo)體股份有限公司	FORMOSA
MBRA160T3	文件：36.43 Kbytes Page：4 Pages	SurfaceMountSchottkyPowerRectifier	ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司	ONSEMI
MBRA160T3	文件：122.69 Kbytes Page：4 Pages	SurfaceMountSchottkyPowerRectifier	ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司	ONSEMI
MBRA160T3	文件：6.37993 Mbytes Page：2 Pages	CHIPSCHOTTKYBARRIERDIODES FEATURES ?PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-OUtilizingFlameRetardantEpoxyMoldingCompound. ?Forsurfacemountedapplications. ?ExceedsenvironmentalstandardsofMIL-S-19500/228 ?Lowleakagecurrent.	TAYCHIPSTShenzhen Taychipst Electronic Co., Ltd 泰迪斯電子深圳市泰迪斯電子科技有限公司	TAYCHIPST
MBRA160T3G	文件：263.72 Kbytes Page：5 Pages	SurfaceMountSchottkyPowerRectifierSMAPowerSurfaceMountPackage ThisdeviceemploystheSchottkyBarrierprincipleinalargearea metal?to?siliconpowerdiode.Stateoftheartgeometryfeatures epitaxialconstructionwithoxidepassivationandmetaloverlay contact.Ideallysuitedforlowvoltage,highfrequencyrectification,or asfreewheelingandpol	ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司	ONSEMI
MBRA160T3G	文件：96.61 Kbytes Page：4 Pages	SurfaceMountSchottkyPowerRectifier	ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司	ONSEMI
MBRA160T3G	文件：122.69 Kbytes Page：4 Pages	SurfaceMountSchottkyPowerRectifier	ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司	ONSEMI
MBRA160T3G	文件：177.38 Kbytes Page：5 Pages	SurfaceMountSchottkyPowerRectifierSMAPowerSurfaceMountPackage ThisdeviceemploystheSchottkyBarrierprincipleinalargearea metal?to?siliconpowerdiode.Stateoftheartgeometryfeatures epitaxialconstructionwithoxidepassivationandmetaloverlay contact.Ideallysuitedforlowvoltage,highfrequencyrectification,or asfreewheelingandpol	ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司	ONSEMI
MBRS160T3G	文件：534.06 Kbytes Page：3 Pages	SURFACEMOUNTSCHOTTKYBARRIERRECTIFIER Features TheplasticpackagecarriesUnderwritersLaboratory FlammabilityClassification94V-0 Forsurfacemountedapplications Metalsiliconjunction,majoritycarrierconduction Lowpowerloss,highefficiency Built-instrainrelief,idealforautomatedplacement Highforwardsurgecurrentc	SYChangzhou Shunye Electronics Co.,Ltd. 順燁電子江蘇順燁電子有限公司	SY

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