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NPT1012

Gallium Nitride 28V, 25W RF Power Transistor

NPT1012

Gallium Nitride 28V, 25W RF Power Transistor

NPT1012

Gallium Nitride 28V, 25W RF Power Transistor;

NPT1012B

Gallium Nitride 28V, 25W RF Power Transistor; ·Optimized for Broadband Operation from DC-4000MHz\n·High Efficiency from 14 - 28V\n·10-20W P3dB CW Power from 30-1000MHz in application board with >50% drain efficiency\n·16-20W P3dB CW Power from 1000-2500MHz in application board with >45% drain efficiency\n·25W P3dB CW Power at 3000MHz\n·4.0 °C/W RTH with Maximum TJRating of 200 °C\n·Robust up to 10:1 VSWR mismatch at all angles with no device damage at 90 °C flange\n·Subject to EAR99 Export Control\n;

For load-pull data and non-linear models, please send an e-mail to applications@macom.com.

NPT1012_15

25W RF Power Transistor

NPT1012B

Next generation high power RF semiconductor technology

NPT1012B

包裝：托盤 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：HEMT N-CH 28V 25W DC-4000MHZ

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