首頁 >NP2301AVR>規(guī)格書列表
| 零件編號(hào) | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
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SiliconNPNTransistorHighVoltageHorizontalOutput Description: TheNTE2301isasiliconNPNpowertransistorinaTO218typepackagedesignedforuseinlargescreendeflectioncircuits. Features: ?Collector–EmitterVoltage:VCEX=1500V ?GlassivatedBase–CollectorJunction ?SafeOperatingArea@50μs=20A,400V ?Switchin | NTE NTE Electronics | NTE | ||
Lowcap.diodearrayfor2LineHighSpeedUSBprotectiondevic | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
20V,2AP-channelTrenchMOSFET | PhilipsPhilips Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
20V,2AP-channelTrenchMOSFET | ZPSEMIZP Semiconductor 至尚臻品 | ZPSEMI | ||
20V,2AP-channelTrenchMOSFET 1.1Generaldescription P-channelenhancementmodeField-EffectTransistor(FET)inasmall SOT23(TO-236AB)Surface-MountedDevice(SMD)plasticpackageusing TrenchMOSFETtechnology. 1.2Featuresandbenefits 1.8VRDSonratedforLowVoltageGateDrive Veryfastswitching TrenchMOSF | NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國)有限公司 | NEXPERIA | ||
P-Channel20-V(D-S)MOSFET FEATURES ?Halogen-freeAccordingtoIEC61249-2-21 Definition ?TrenchFET?PowerMOSFET ?100RgTested ?ComplianttoRoHSDirective2002/95/EC APPLICATIONS ?LoadSwitch ?PASwitch ?DC/DCConverters | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司 | VBSEMI | ||
Low-Noise,High-Speed,16-BitAccurate,CMOSOPERATIONALAMPLIFIER | TITexas Instruments 德州儀器美國德州儀器公司 | TI | ||
OPERATIONALAMPLIFIER | TI1Texas Instruments 德州儀器美國德州儀器公司 | TI1 | ||
Low-Noise,High-Speed,16-BitAccurate,CMOSOPERATIONALAMPLIFIER | TITexas Instruments 德州儀器美國德州儀器公司 | TI | ||
OPERATIONALAMPLIFIER | TI1Texas Instruments 德州儀器美國德州儀器公司 | TI1 |
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