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NGD4300DD

絲印：NGD4300；Package：HSO8；4 A peak high-performance dual MOSFET gate driver

1.Generaldescription TheNGD4300isahigh-performancegatedriver designedtodrivebothhigh-sideandlow-sideNchannel MOSFETsinasynchronousbuckorahalfbridge configuration.Thefloatinghigh-sidedriver canworkwithrailvoltagesupto120Vandusesa bootstrapsupplywithani

NGD4300DD-Q100

絲?。?a target="_blank" title="Marking" href="/ngd4300/marking.html">NGD4300；Package：HSO8；4 A peak high-performance dual MOSFET gate driver

1.Generaldescription TheNGD4300-Q100isahigh-performancegate driverdesignedtodrivebothhigh-sideandlow-side N-channelMOSFETsinasynchronousbuckorahalfbridge configuration.Thefloatinghigh-sidedriver canworkwithrailvoltagesupto120Vandusesa bootstrapsupplywit

NGD4300DD-Q100

4 A peak high-performance dual MOSFET gate driver;

The NGD4300-Q100 is a high-performance gate driver designed to drive both high-side and low-side N-channel MOSFETs in a synchronous buck or a half-bridge configuration. The floating high-side driver can work with rail voltages up to 120 V and uses a bootstrap supply with an integrated diode. Both low-side and high-side output drivers have an independent undervoltage lockout (UVLO) circuit which disables the output driver when the driver supply is below its threshold level. The NGD4300-Q100 accepts input control signals complying with both TTL and CMOS signaling as low as 2.5 V (±10%). The low voltage, provided by an internal voltage regulator, is used to supply circuitry in signal paths controlling the low-side and high-side power switches. This enables a low-power operation and a better controlled driver performance irrespective of the IC supply voltage.\n Excellent delay matching of 1 ns typical is achieved for the low-side and high-side signal paths. The 4 A peak source and sink current capability of the driver’s output stage guarantees short rise- and fall-times even at high loads.\n The NGD4300-Q100 is offered in the HSO8 package, and operates over an extended ??40 °C to +125 °C temperature range.\n This product has been qualified to the Automotive Electronics Council (AEC) standard Q100 (Grade 1) and is suitable for use in automotive applications.\n

NGD4300GC

4Apeakhigh-performancedualMOSFETgatedriver

1.Generaldescription TheNGD4300isahigh-performancegatedriver designedtodrivebothhigh-sideandlow-sideNchannel MOSFETsinasynchronousbuckorahalfbridge configuration.Thefloatinghigh-sidedriver canworkwithrailvoltagesupto120Vandusesa bootstrapsupplywithani

NIPXIE-4300

DataAcquisitionwithIntegratedSignalConditioningforHigh-VoltageMeasurements

PA4300

POWERMAGNETICS