首頁 >NFI10K100TRF>規(guī)格書列表
| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
SiliconNPNDarlingtionPowerTransistor DESCRIPTION ?HighDCcurrentgain ?Collector-EmitterSustainingVoltageVCEO(SUS)=100V(Min) ?ComplementtotypePMD11K100 APPLICATIONS ?Designedforgeneralpurposeamplifierandlowfrequencyswitchingapplications | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導體新澤西半導體產(chǎn)品股份有限公司 | NJSEMI | ||
SiliconPowerDarlingtonTransistors | CentralCentral Semiconductor Corp 美國中央半導體 | Central | ||
iscSiliconNPNDarlingtionPowerTransistor DESCRIPTION ?HighDCcurrentgain ?Collector-EmitterSustainingVoltageVCEO(SUS)=100V(Min) ?ComplementtotypePMD11K100 APPLICATIONS ?Designedforgeneralpurposeamplifierandlowfrequencyswitchingapplications | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
PowerTransistors PowerTransistors TO-3Case(Continued) | CentralCentral Semiconductor Corp 美國中央半導體 | Central | ||
SILICONPOWERDARLINGTRANSISTORSl SILICONPOWERDARLINGTONTRANSISTORS | CentralCentral Semiconductor Corp 美國中央半導體 | Central | ||
HighCurrentDensitySurface-MountTMBS?(TrenchMOSBarrierSchottky)Rectifier | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
HighCurrentDensitySurface-MountTrenchMOSBarrierSchottkyRectifier FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C ?AEC-Q101qualifiedavailable? -Automotiveorderingcode:baseP/NHM3 ?Materialcategorization:fordefinition | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
HighCurrentDensitySurface-MountTrenchMOSBarrierSchottkyRectifier | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay |
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