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NES1821P-50中文資料瑞薩數(shù)據(jù)手冊(cè)PDF規(guī)格書

NES1821P-50
廠商型號(hào)

NES1821P-50

功能描述

N-CHANNEL GaAs MES FET

文件大小

226.54 Kbytes

頁(yè)面數(shù)量

14 頁(yè)

生產(chǎn)廠商

RENESAS

中文名稱

瑞薩

網(wǎng)址

網(wǎng)址

數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-8-13 23:01:00

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NES1821P-50規(guī)格書詳情

50 W L-BAND PUSH-PULL POWER GaAs MESFET

DESCRIPTION

The NES1821P-50 is a 50 W push-pull type GaAs MESFET designed for high power transmitter applications for

PCS, DCS and PHS base station systems. It is capable of delivering 50 watts of output power (CW) with high linear

gain, high efficiency and excellent distortion. Its primary band is 1.8 to 2.1 GHz, however with different matching, 60

MHz or less of instantaneous bandwidth can be achieved anywhere from 1.5 to 2.1 GHz. The device employs 0.9

mm Tungsten Silicide gates, via holes, plated heat sink, and silicon dioxide passivation for superior performance,

thermal characteristics, and reliability.

Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures.

FEATURES

? Push-pull type N-channel GaAs MESFET

? High Output Power: 50 W typ.

? High Linear Gain: 10.5 dB typ.

? High Drain Efficiency: 52 typ. @VDS = 10 V, IDset = 2 A, f = 1.96 GHz

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
MW/臺(tái)灣明緯
24+
NA/
41
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WEAN WE
24+
DC-DC
80000
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23+
27000
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OKI
6000
面議
19
QFP
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NEC
23+
TO-59
8510
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NEC
24+
94
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Lumberg
2022+
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6800
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1923+
原廠封裝
3000
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WEANWE
2020+
DC-DC
41
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可
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220
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